We study spin torque oscillators comprised of a perpendicular spin injection layer (SIL) and a planar field generating layer to reveal the influence of the spin polarization of SIL material on the critical current density, JC, to induce microwave oscillation. Two systems with different SIL are compared: one with a highly spin-polarized Heusler alloy, Co2Fe(Ga0.5Ge0.5) (CFGG), and the other a prototypical Fe2Co alloy. Cross sectional scanning transmission electron microscopy observations show the B2-ordered structure in a 3-nm-thick CFGG SIL, a prerequisite for obtaining half-metallic transport properties. Current induced microwave oscillations are found at frequencies of ∼15 GHz for both systems. However, the current needed to cause the oscillations is ∼50% smaller for films with the CFGG SIL compared to those of the Fe2Co SIL. These results are in accordance with micromagnetic simulations that include spin accumulation at the SIL.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)