Reduction of critical current density for domain wall motion in U-shaped magnetic patterns

N. Ohshima, H. Numata, T. Suzuki, S. Fukami, K. Nagahara, N. Ishiwata

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

The critical current density required for current-induced domain wall motion (Jc) was reduced by decreasing the magnetization (Ms) of the free layer film of a U-shaped pattern for a domain wall motion memory. The Ms was decreased by adding the nonmagnetic elements Ta and Cu to NiFe films. The Jc of the U-shaped patterns with NiFe-Ta and -Cu decreased as the proportion of Ta and Cu in the NiFe increased. The relations between Ms and Jc were examined and it was found that Jc decreased monotonically from 1.2× 1012 to 0.8× 1012 A m2 as Ms decreased from 1.0 to 0.6 T regardless of what other materials were used. It is considered that the decrease in Ms caused a decrease in the hard axis anisotropy of the pattern, and the Jc decreased as predicted by a one-dimensional model.

Original languageEnglish
Article number07D914
JournalJournal of Applied Physics
Volume103
Issue number7
DOIs
Publication statusPublished - 2008 Apr 21
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Reduction of critical current density for domain wall motion in U-shaped magnetic patterns'. Together they form a unique fingerprint.

Cite this