Reduction of conducted electromagnetic interference in SMPS using programmable gate driving strength

A. Shorten, A. A. Fomani, W. T. Ng, H. Nishio, Y. Takahashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

A gate driver IC with programmable driving strength to reduce conducted electromagnetic interference (CEMI) in SMPS is presented in this paper. The solution presented is to dynamically adjust the gate driving strength (output resistance Rout) at the arrival of each gate pulse to minimize CEMI while maintaining low switching loss. Dynamically adjusting Rout is not possible with conventional gate driver designs. A segmented gate driver is designed and fabricated in the AMS 0.35μm 40V HVCMOS process. Unlike snubber circuits, the proposed method does not require extra discrete components or wasted energy. Experimental results indicate up to a 7dBμV improvement in peak CEMI between 20 MHz and 30 MHz.

Original languageEnglish
Title of host publicationISPSD 2011 - Proceedings of the 23rd International Symposium on Power Semiconductor Devices and ICs
Pages364-367
Number of pages4
DOIs
Publication statusPublished - 2011 Dec 1
Externally publishedYes
Event23rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2011 - San Diego, CA, United States
Duration: 2011 May 232011 May 26

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Other

Other23rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2011
CountryUnited States
CitySan Diego, CA
Period11/5/2311/5/26

ASJC Scopus subject areas

  • Engineering(all)

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