TY - GEN
T1 - Reduction of conducted electromagnetic interference in SMPS using programmable gate driving strength
AU - Shorten, A.
AU - Fomani, A. A.
AU - Ng, W. T.
AU - Nishio, H.
AU - Takahashi, Y.
PY - 2011
Y1 - 2011
N2 - A gate driver IC with programmable driving strength to reduce conducted electromagnetic interference (CEMI) in SMPS is presented in this paper. The solution presented is to dynamically adjust the gate driving strength (output resistance Rout) at the arrival of each gate pulse to minimize CEMI while maintaining low switching loss. Dynamically adjusting Rout is not possible with conventional gate driver designs. A segmented gate driver is designed and fabricated in the AMS 0.35μm 40V HVCMOS process. Unlike snubber circuits, the proposed method does not require extra discrete components or wasted energy. Experimental results indicate up to a 7dBμV improvement in peak CEMI between 20 MHz and 30 MHz.
AB - A gate driver IC with programmable driving strength to reduce conducted electromagnetic interference (CEMI) in SMPS is presented in this paper. The solution presented is to dynamically adjust the gate driving strength (output resistance Rout) at the arrival of each gate pulse to minimize CEMI while maintaining low switching loss. Dynamically adjusting Rout is not possible with conventional gate driver designs. A segmented gate driver is designed and fabricated in the AMS 0.35μm 40V HVCMOS process. Unlike snubber circuits, the proposed method does not require extra discrete components or wasted energy. Experimental results indicate up to a 7dBμV improvement in peak CEMI between 20 MHz and 30 MHz.
UR - http://www.scopus.com/inward/record.url?scp=84880742726&partnerID=8YFLogxK
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U2 - 10.1109/ISPSD.2011.5890866
DO - 10.1109/ISPSD.2011.5890866
M3 - Conference contribution
AN - SCOPUS:84880742726
SN - 9781424484225
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 364
EP - 367
BT - ISPSD 2011 - Proceedings of the 23rd International Symposium on Power Semiconductor Devices and ICs
T2 - 23rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2011
Y2 - 23 May 2011 through 26 May 2011
ER -