Reduction of conducted electromagnetic interference in SMPS using programmable gate driving strength

A. Shorten; A. A. Fomani; W. T. Ng; H. Nishio; Y. Takahashi

doi:10.1109/ISPSD.2011.5890866

Reduction of conducted electromagnetic interference in SMPS using programmable gate driving strength

A. Shorten, A. A. Fomani, W. T. Ng, H. Nishio, Y. Takahashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

A gate driver IC with programmable driving strength to reduce conducted electromagnetic interference (CEMI) in SMPS is presented in this paper. The solution presented is to dynamically adjust the gate driving strength (output resistance R_out) at the arrival of each gate pulse to minimize CEMI while maintaining low switching loss. Dynamically adjusting R_out is not possible with conventional gate driver designs. A segmented gate driver is designed and fabricated in the AMS 0.35μm 40V HVCMOS process. Unlike snubber circuits, the proposed method does not require extra discrete components or wasted energy. Experimental results indicate up to a 7dBμV improvement in peak CEMI between 20 MHz and 30 MHz.

Original language	English
Title of host publication	ISPSD 2011 - Proceedings of the 23rd International Symposium on Power Semiconductor Devices and ICs
Pages	364-367
Number of pages	4
DOIs	https://doi.org/10.1109/ISPSD.2011.5890866
Publication status	Published - 2011 Dec 1
Externally published	Yes
Event	23rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2011 - San Diego, CA, United States Duration: 2011 May 23 → 2011 May 26

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)	1063-6854

Other

Other	23rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2011
Country	United States
City	San Diego, CA
Period	11/5/23 → 11/5/26

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/ISPSD.2011.5890866

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Cite this

Shorten, A., Fomani, A. A., Ng, W. T., Nishio, H., & Takahashi, Y. (2011). Reduction of conducted electromagnetic interference in SMPS using programmable gate driving strength. In ISPSD 2011 - Proceedings of the 23rd International Symposium on Power Semiconductor Devices and ICs (pp. 364-367). [5890866] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2011.5890866

Reduction of conducted electromagnetic interference in SMPS using programmable gate driving strength. / Shorten, A.; Fomani, A. A.; Ng, W. T.; Nishio, H.; Takahashi, Y.

ISPSD 2011 - Proceedings of the 23rd International Symposium on Power Semiconductor Devices and ICs. 2011. p. 364-367 5890866 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shorten, A, Fomani, AA, Ng, WT, Nishio, H & Takahashi, Y 2011, Reduction of conducted electromagnetic interference in SMPS using programmable gate driving strength. in ISPSD 2011 - Proceedings of the 23rd International Symposium on Power Semiconductor Devices and ICs., 5890866, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, pp. 364-367, 23rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2011, San Diego, CA, United States, 11/5/23. https://doi.org/10.1109/ISPSD.2011.5890866

Shorten A, Fomani AA, Ng WT, Nishio H, Takahashi Y. Reduction of conducted electromagnetic interference in SMPS using programmable gate driving strength. In ISPSD 2011 - Proceedings of the 23rd International Symposium on Power Semiconductor Devices and ICs. 2011. p. 364-367. 5890866. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2011.5890866

Shorten, A. ; Fomani, A. A. ; Ng, W. T. ; Nishio, H. ; Takahashi, Y. / Reduction of conducted electromagnetic interference in SMPS using programmable gate driving strength. ISPSD 2011 - Proceedings of the 23rd International Symposium on Power Semiconductor Devices and ICs. 2011. pp. 364-367 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

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