TY - JOUR
T1 - Reduction of charge injection barrier by 1-nm contact oxide interlayer in organic field effect transistors
AU - Darmawan, Peter
AU - Minari, Takeo
AU - Kumatani, Akichika
AU - Li, Yun
AU - Liu, Chuan
AU - Tsukagoshi, Kazuhito
N1 - Funding Information:
This study was supported in part by a Grant-In-Aid for Scientific Research (No. 218505) from the Ministry of Education, Culture, Sport, Science and Technology of Japan. It was also supported in part by a Grant for Advanced Industrial Technology Development (No. 11B11016d) from the New Energy and Industrial Technology Development Organization, Japan. We would like to express our gratitude to Zeon Corporation for providing us with the ZOP-202 polymer that was used for gate dielectric modification in our devices. The author would especially like to thank Mr. Ong Hock Guan (Nanyang Technological University, Singapore) for fruitful discussions.
PY - 2012/1/2
Y1 - 2012/1/2
N2 - The enhancement of the charge injection process by the insertion of an ultrathin (∼1 nm) contact oxide interlayer (COI) at the metal/organic material interface in organic field effect transistors (OFETs) is reported. Six different oxides were used as COI, and Al 2O 3 was found to exhibit the highest OFET mobility with a reduction in the average contact resistance (R c) from 19.9 to 1.9 kΩ·cm. Photoelectron yield spectroscopy analysis revealed that the insertion of COI increases the work function of an Au contact and reduces the charge injection barrier at the interface, which lowers R c and, therefore, results in enhanced device performance.
AB - The enhancement of the charge injection process by the insertion of an ultrathin (∼1 nm) contact oxide interlayer (COI) at the metal/organic material interface in organic field effect transistors (OFETs) is reported. Six different oxides were used as COI, and Al 2O 3 was found to exhibit the highest OFET mobility with a reduction in the average contact resistance (R c) from 19.9 to 1.9 kΩ·cm. Photoelectron yield spectroscopy analysis revealed that the insertion of COI increases the work function of an Au contact and reduces the charge injection barrier at the interface, which lowers R c and, therefore, results in enhanced device performance.
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U2 - 10.1063/1.3673842
DO - 10.1063/1.3673842
M3 - Article
AN - SCOPUS:84862907467
VL - 100
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 1
M1 - 013303
ER -