Reduction of charge injection barrier by 1-nm contact oxide interlayer in organic field effect transistors

Peter Darmawan; Takeo Minari; Akichika Kumatani; Yun Li; Chuan Liu; Kazuhito Tsukagoshi

doi:10.1063/1.3673842

Reduction of charge injection barrier by 1-nm contact oxide interlayer in organic field effect transistors

Peter Darmawan, Takeo Minari, Akichika Kumatani, Yun Li, Chuan Liu, Kazuhito Tsukagoshi

Research output: Contribution to journal › Article

36 Citations (Scopus)

Abstract

The enhancement of the charge injection process by the insertion of an ultrathin (∼1 nm) contact oxide interlayer (COI) at the metal/organic material interface in organic field effect transistors (OFETs) is reported. Six different oxides were used as COI, and Al ₂O ₃ was found to exhibit the highest OFET mobility with a reduction in the average contact resistance (R _c) from 19.9 to 1.9 kΩ·cm. Photoelectron yield spectroscopy analysis revealed that the insertion of COI increases the work function of an Au contact and reduces the charge injection barrier at the interface, which lowers R _c and, therefore, results in enhanced device performance.

Original language	English
Article number	013303
Journal	Applied Physics Letters
Volume	100
Issue number	1
DOIs	https://doi.org/10.1063/1.3673842
Publication status	Published - 2012 Jan 2
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Darmawan, P., Minari, T., Kumatani, A., Li, Y., Liu, C., & Tsukagoshi, K. (2012). Reduction of charge injection barrier by 1-nm contact oxide interlayer in organic field effect transistors. Applied Physics Letters, 100(1), [013303]. https://doi.org/10.1063/1.3673842

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AU - Tsukagoshi, Kazuhito

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