Reduction of charge injection barrier by 1-nm contact oxide interlayer in organic field effect transistors

Peter Darmawan, Takeo Minari, Akichika Kumatani, Yun Li, Chuan Liu, Kazuhito Tsukagoshi

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

The enhancement of the charge injection process by the insertion of an ultrathin (∼1 nm) contact oxide interlayer (COI) at the metal/organic material interface in organic field effect transistors (OFETs) is reported. Six different oxides were used as COI, and Al 2O 3 was found to exhibit the highest OFET mobility with a reduction in the average contact resistance (R c) from 19.9 to 1.9 kΩ·cm. Photoelectron yield spectroscopy analysis revealed that the insertion of COI increases the work function of an Au contact and reduces the charge injection barrier at the interface, which lowers R c and, therefore, results in enhanced device performance.

Original languageEnglish
Article number013303
JournalApplied Physics Letters
Volume100
Issue number1
DOIs
Publication statusPublished - 2012 Jan 2
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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