Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique

Shigefusa Chichibu; T. Koida; M. D. Craven; B. A. Haskell; T. Onuma; T. Sota; J. S. Speck; S. P. DenBaars; S. Nakamura

doi:10.1002/pssc.200461423

Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique

Shigefusa Chichibu, T. Koida, M. D. Craven, B. A. Haskell, T. Onuma, T. Sota, J. S. Speck, S. P. DenBaars, S. Nakamura

Research output: Contribution to journal › Article › peer-review

Abstract

Reduction in bound-state and nonradiative defect densities was shown in nonpolar (11-20) Al_xGa_1-xN/GaN multiple quantum wells (MQWs) grown on GaN templates prepared by lateral epitaxial overgrowth (LEO-GaN), in terms of the appearance of correct in-plane light polarization and improved internal quantum efficiency. The (11-20) LEO-GaN grown by halide vapor phase epitaxy exhibited a fairly long photoluminescence (PL) lifetime (τ_PL=530 ps) at 300 K. Structural advantages of using nonpolar orientations were confirmed by a moderate shift of the PL peak energy and negligible change in low-temperature τ_PL with decreasing GaN well width, both of which are the results of eliminating quantum-confined Stark effects due to the spontaneous and piezoelectric polarization which exists in polar (0001) MQWs.

Original language	English
Pages (from-to)	2700-2703
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	2
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200461423
Publication status	Published - 2005 Nov 7
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1002/pssc.200461423

Cite this

Chichibu, S., Koida, T., Craven, M. D., Haskell, B. A., Onuma, T., Sota, T., Speck, J. S., DenBaars, S. P., & Nakamura, S. (2005). Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique. Physica Status Solidi C: Conferences, 2(7), 2700-2703. https://doi.org/10.1002/pssc.200461423

Chichibu, S, Koida, T, Craven, MD, Haskell, BA, Onuma, T, Sota, T, Speck, JS, DenBaars, SP & Nakamura, S 2005, 'Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique', Physica Status Solidi C: Conferences, vol. 2, no. 7, pp. 2700-2703. https://doi.org/10.1002/pssc.200461423

@article{9cd545a3f5d2460fb70e6e68cde2d48c,

title = "Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique",

abstract = "Reduction in bound-state and nonradiative defect densities was shown in nonpolar (11-20) AlxGa1-xN/GaN multiple quantum wells (MQWs) grown on GaN templates prepared by lateral epitaxial overgrowth (LEO-GaN), in terms of the appearance of correct in-plane light polarization and improved internal quantum efficiency. The (11-20) LEO-GaN grown by halide vapor phase epitaxy exhibited a fairly long photoluminescence (PL) lifetime (τPL=530 ps) at 300 K. Structural advantages of using nonpolar orientations were confirmed by a moderate shift of the PL peak energy and negligible change in low-temperature τPL with decreasing GaN well width, both of which are the results of eliminating quantum-confined Stark effects due to the spontaneous and piezoelectric polarization which exists in polar (0001) MQWs.",

author = "Shigefusa Chichibu and T. Koida and Craven, {M. D.} and Haskell, {B. A.} and T. Onuma and T. Sota and Speck, {J. S.} and DenBaars, {S. P.} and S. Nakamura",

year = "2005",

month = nov,

day = "7",

doi = "10.1002/pssc.200461423",

language = "English",

volume = "2",

pages = "2700--2703",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "7",

}

TY - JOUR

T1 - Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique

AU - Chichibu, Shigefusa

AU - Koida, T.

AU - Craven, M. D.

AU - Haskell, B. A.

AU - Onuma, T.

AU - Sota, T.

AU - Speck, J. S.

AU - DenBaars, S. P.

AU - Nakamura, S.

PY - 2005/11/7

Y1 - 2005/11/7

N2 - Reduction in bound-state and nonradiative defect densities was shown in nonpolar (11-20) AlxGa1-xN/GaN multiple quantum wells (MQWs) grown on GaN templates prepared by lateral epitaxial overgrowth (LEO-GaN), in terms of the appearance of correct in-plane light polarization and improved internal quantum efficiency. The (11-20) LEO-GaN grown by halide vapor phase epitaxy exhibited a fairly long photoluminescence (PL) lifetime (τPL=530 ps) at 300 K. Structural advantages of using nonpolar orientations were confirmed by a moderate shift of the PL peak energy and negligible change in low-temperature τPL with decreasing GaN well width, both of which are the results of eliminating quantum-confined Stark effects due to the spontaneous and piezoelectric polarization which exists in polar (0001) MQWs.

AB - Reduction in bound-state and nonradiative defect densities was shown in nonpolar (11-20) AlxGa1-xN/GaN multiple quantum wells (MQWs) grown on GaN templates prepared by lateral epitaxial overgrowth (LEO-GaN), in terms of the appearance of correct in-plane light polarization and improved internal quantum efficiency. The (11-20) LEO-GaN grown by halide vapor phase epitaxy exhibited a fairly long photoluminescence (PL) lifetime (τPL=530 ps) at 300 K. Structural advantages of using nonpolar orientations were confirmed by a moderate shift of the PL peak energy and negligible change in low-temperature τPL with decreasing GaN well width, both of which are the results of eliminating quantum-confined Stark effects due to the spontaneous and piezoelectric polarization which exists in polar (0001) MQWs.

UR - http://www.scopus.com/inward/record.url?scp=27344459919&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27344459919&partnerID=8YFLogxK

U2 - 10.1002/pssc.200461423

DO - 10.1002/pssc.200461423

M3 - Article

AN - SCOPUS:27344459919

SN - 1862-6351

VL - 2

SP - 2700

EP - 2703

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 7

ER -

Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this