Reduction in bound-state and nonradiative defect densities was shown in nonpolar (11-20) AlxGa1-xN/GaN multiple quantum wells (MQWs) grown on GaN templates prepared by lateral epitaxial overgrowth (LEO-GaN), in terms of the appearance of correct in-plane light polarization and improved internal quantum efficiency. The (11-20) LEO-GaN grown by halide vapor phase epitaxy exhibited a fairly long photoluminescence (PL) lifetime (τPL=530 ps) at 300 K. Structural advantages of using nonpolar orientations were confirmed by a moderate shift of the PL peak energy and negligible change in low-temperature τPL with decreasing GaN well width, both of which are the results of eliminating quantum-confined Stark effects due to the spontaneous and piezoelectric polarization which exists in polar (0001) MQWs.
|Number of pages||4|
|Journal||Physica Status Solidi C: Conferences|
|Publication status||Published - 2005 Nov 7|
ASJC Scopus subject areas
- Condensed Matter Physics