Reduction of base resistance and increase in cutoff frequency of Si bipolar transistor using rapid vapor-phase doping

Yukihiro Kiyota, Toshiyuki Kikuchi, Katsuyoshi Washio, Taroh Inada

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The shallow intrinsic base region of a double poly-Si self-aligned bipolar transistor was formed by rapid vapor-phase doping (RVD) in order to increase the high-frequency performance, compared to that provided by low-energy BF2 ion implantation. RVD produced a transistor with fT of 50-GHz and rb of 400-Ω. These parameters are 20% higher and 15% tower than those of a transistor produced by BF2 implantation. Low base resistance also led to an increase in the maximum oscillation frequency fmax to over 40 GHz in transistors with longer emitter. A two-dimensional profile simulation clarified that RVD can form a shallower intrinsic base profile and a deeper link base profile than those formed by BF2 ion implantation. These doping profiles made it possible to increase fT and fmax, and to reduce rb simultaneously.

Original languageEnglish
Pages (from-to)1987-1991
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number4 B
Publication statusPublished - 2000 Dec 1
Externally publishedYes

Keywords

  • Base resistanc
  • Cutoff frequency
  • Maximum oscillation frequency
  • RVD
  • Si bipolar transistor

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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