Reduction in sidewall recombination velocity by selective disordering in GaAs/AlGaAs quantum well mesa structures

N. Hamao; M. Sugimoto; S. Kohmoto; H. Yokoyama

doi:10.1063/1.105296

Reduction in sidewall recombination velocity by selective disordering in GaAs/AlGaAs quantum well mesa structures

N. Hamao, M. Sugimoto, S. Kohmoto, H. Yokoyama

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Sidewall recombination in SiO₂-capped GaAs/AlGaAs multiple quantum well mesa structures is investigated using a time-resolved photoluminescence technique. Nonradiative recombination lifetimes in annealed samples are improved significantly compared with those in samples which are not annealed. This effect contributes to a reduction in sidewall recombination velocity due to disordering of quantum wells at the sidewall by cap annealing. Numerical analysis is used to fit the experimentally observed sample size dependence of the nonradiative lifetimes to calculated curves. This shows that the effective sidewall recombination velocity is reduced from 8×10 ⁶ to 4×10⁴ cm/s.

Original language	English
Pages (from-to)	1488-1490
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	12
DOIs	https://doi.org/10.1063/1.105296
Publication status	Published - 1991
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.105296

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@article{188770c5d34a4434be5f76fc51923e1e,

title = "Reduction in sidewall recombination velocity by selective disordering in GaAs/AlGaAs quantum well mesa structures",

abstract = "Sidewall recombination in SiO2-capped GaAs/AlGaAs multiple quantum well mesa structures is investigated using a time-resolved photoluminescence technique. Nonradiative recombination lifetimes in annealed samples are improved significantly compared with those in samples which are not annealed. This effect contributes to a reduction in sidewall recombination velocity due to disordering of quantum wells at the sidewall by cap annealing. Numerical analysis is used to fit the experimentally observed sample size dependence of the nonradiative lifetimes to calculated curves. This shows that the effective sidewall recombination velocity is reduced from 8×10 6 to 4×104 cm/s.",

author = "N. Hamao and M. Sugimoto and S. Kohmoto and H. Yokoyama",

year = "1991",

doi = "10.1063/1.105296",

language = "English",

volume = "59",

pages = "1488--1490",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Reduction in sidewall recombination velocity by selective disordering in GaAs/AlGaAs quantum well mesa structures

AU - Hamao, N.

AU - Sugimoto, M.

AU - Kohmoto, S.

AU - Yokoyama, H.

PY - 1991

Y1 - 1991

N2 - Sidewall recombination in SiO2-capped GaAs/AlGaAs multiple quantum well mesa structures is investigated using a time-resolved photoluminescence technique. Nonradiative recombination lifetimes in annealed samples are improved significantly compared with those in samples which are not annealed. This effect contributes to a reduction in sidewall recombination velocity due to disordering of quantum wells at the sidewall by cap annealing. Numerical analysis is used to fit the experimentally observed sample size dependence of the nonradiative lifetimes to calculated curves. This shows that the effective sidewall recombination velocity is reduced from 8×10 6 to 4×104 cm/s.

AB - Sidewall recombination in SiO2-capped GaAs/AlGaAs multiple quantum well mesa structures is investigated using a time-resolved photoluminescence technique. Nonradiative recombination lifetimes in annealed samples are improved significantly compared with those in samples which are not annealed. This effect contributes to a reduction in sidewall recombination velocity due to disordering of quantum wells at the sidewall by cap annealing. Numerical analysis is used to fit the experimentally observed sample size dependence of the nonradiative lifetimes to calculated curves. This shows that the effective sidewall recombination velocity is reduced from 8×10 6 to 4×104 cm/s.

UR - http://www.scopus.com/inward/record.url?scp=4243144704&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4243144704&partnerID=8YFLogxK

U2 - 10.1063/1.105296

DO - 10.1063/1.105296

M3 - Article

AN - SCOPUS:4243144704

VL - 59

SP - 1488

EP - 1490

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

ER -

Reduction in sidewall recombination velocity by selective disordering in GaAs/AlGaAs quantum well mesa structures

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