Reduction in sidewall recombination velocity by selective disordering in GaAs/AlGaAs quantum well mesa structures

N. Hamao, M. Sugimoto, S. Kohmoto, H. Yokoyama

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Sidewall recombination in SiO2-capped GaAs/AlGaAs multiple quantum well mesa structures is investigated using a time-resolved photoluminescence technique. Nonradiative recombination lifetimes in annealed samples are improved significantly compared with those in samples which are not annealed. This effect contributes to a reduction in sidewall recombination velocity due to disordering of quantum wells at the sidewall by cap annealing. Numerical analysis is used to fit the experimentally observed sample size dependence of the nonradiative lifetimes to calculated curves. This shows that the effective sidewall recombination velocity is reduced from 8×10 6 to 4×104 cm/s.

Original languageEnglish
Pages (from-to)1488-1490
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number12
DOIs
Publication statusPublished - 1991 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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