Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures

H. Iwata, H. Yokoyama, M. Sugimoto, N. Hamao, K. Onabe

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

The values of interfacial recombination velocities in GaAs/AlGaAs double heterostructures and quantum wells grown by molecular beam epitaxy with and without superlattice cladding layers are obtained with photoluminescence time-decay measurements. The authors show that superlattice layers reduce the interfacial recombination velocity from 330 cm/s, the value for double heterostructures with alloy cladding layers, to 40 cm/s, and that they have small effect on the GaAs bulk lifetime.

Original languageEnglish
Pages (from-to)2427-2428
Number of pages2
JournalApplied Physics Letters
Volume54
Issue number24
DOIs
Publication statusPublished - 1989 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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