Reducing contact resistance in ferroelectric organic transistors by buffering the semiconductor/dielectric interface

Huabin Sun, Yao Yin, Qijing Wang, Qian Jun, Yu Wang, Kazuhito Tsukagoshi, Xizhang Wang, Zheng Hu, Lijia Pan, Youdou Zheng, Yi Shi, Yun Li

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The reduction of contact resistance in ferroelectric organic field-effect transistors (Fe-OFETs) by buffering the interfacial polarization fluctuation was reported. An ultrathin poly(methyl methacrylate) layer was inserted between the ferroelectric polymer and organic semiconductor layers. The contact resistance was significantly reduced to 55 kΩ cm. By contrast, Fe-OFETs without buffering exhibited a significantly larger contact resistance of 260 kΩ cm. Results showed that such an enhanced charge injection was attributed to the buffering effect at the semiconductor/ferroelectric interface, which narrowed the trap distribution of the organic semiconductor in the contact region. The presented work provided an efficient method of lowering the contact resistance in Fe-OFETs, which is beneficial for the further development of Fe-OFETs.

Original languageEnglish
Article number053304
JournalApplied Physics Letters
Volume107
Issue number5
DOIs
Publication statusPublished - 2015 Aug 3
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Sun, H., Yin, Y., Wang, Q., Jun, Q., Wang, Y., Tsukagoshi, K., Wang, X., Hu, Z., Pan, L., Zheng, Y., Shi, Y., & Li, Y. (2015). Reducing contact resistance in ferroelectric organic transistors by buffering the semiconductor/dielectric interface. Applied Physics Letters, 107(5), [053304]. https://doi.org/10.1063/1.4928534