Reduced poly-Si TFT threshold voltage instability by high-temperature hydrogenation of a-Si-like spin centers

Yoshiaki Kamigaki, Takashi Hashimoto, Masaaki Aoki, Ken'etsu Yokogawa, Masahiro Moniwa, Sinpei Iijima, Masataka Minami, Hiroshi Ishida, Hidekazu Okuhira, Sigeru Aoki, Toshiaki Yamanaka

    Research output: Contribution to journalConference articlepeer-review

    3 Citations (Scopus)

    Abstract

    New findings of this work are as follows: a-Si-like spin centers (·Si≡Si3) are found to exist in CVD-SiO2 gate dielectric films as well as poly-Si substrate films. High-temperature hydrogenation (HTH) at 850 °C is effective in terminating these spin centers and in reducing the poly-Si PMOS TFT threshold voltage instability.

    Original languageEnglish
    Pages (from-to)12-17
    Number of pages6
    JournalAnnual Proceedings - Reliability Physics (Symposium)
    DOIs
    Publication statusPublished - 1995 Jan 1
    EventProceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA
    Duration: 1995 Apr 41995 Apr 6

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Safety, Risk, Reliability and Quality

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