Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy

L. Y. Li, K. Shima, M. Yamanaka, K. Kojima, T. Egawa, A. Uedono, S. Ishibashi, T. Takeuchi, M. Miyoshi, S. F. Chichibu

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