N-polar (0001¯) (-c-plane) InGaN light-emitting diodes with emission wavelengths ranging from blue to green to red were fabricated on a c-plane sapphire substrate by metalorganic vapor phase epitaxy. The optimization of growth conditions for -c-plane InGaN/GaN multiple quantum wells was performed. As a result, the extension of the emission wavelength from 444 to 633nm under a constant current of 20mA was achieved by changing the growth temperature of quantum wells from 880 to 790 °C.
ASJC Scopus subject areas
- Physics and Astronomy(all)