Red to blue wavelength emission of N-polar (0001¯) InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy

Kanako Shojiki, Tomoyuki Tanikawa, Jung Hun Choi, Shigeyuki Kuboya, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)

Abstract

N-polar (0001¯) (-c-plane) InGaN light-emitting diodes with emission wavelengths ranging from blue to green to red were fabricated on a c-plane sapphire substrate by metalorganic vapor phase epitaxy. The optimization of growth conditions for -c-plane InGaN/GaN multiple quantum wells was performed. As a result, the extension of the emission wavelength from 444 to 633nm under a constant current of 20mA was achieved by changing the growth temperature of quantum wells from 880 to 790 °C.

Original languageEnglish
Article number061005
JournalApplied Physics Express
Volume8
Issue number6
DOIs
Publication statusPublished - 2015 Jun 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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