Red emission properties of europium doped GaN powders prepared by a Na flux method

E. Brown, U. Hommerich, T. Yamada, H. Yamane, J. M. Zavada

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1 Citation (Scopus)


Temperature dependent and time-resolved photoluminescence (PL) studies were performed on the red emission properties of Eu doped GaN powders prepared by a Na flux method. The Eu3+ doped GaN powder showed bright red emission (∼622 nm) at room temperature, which corresponds to the intra-4f Eu 3+ transition 5D07F 2. It was observed that under above-gap excitation the integrated Eu3+ PL intensity was quenched by a factor of ∼20 for the temperature range 10 to 300 K. In contrast, the emission lifetime was only slightly temperature dependent with an average value of ∼242 μs at room temperature. Photoluminescence excitation (PLE) measurements performed in the visible spectral region revealed a weak defect-related and broad excitation band superimposed by narrow intra-4f absorption lines of Eu3+ ions. Moreover, PLE studies for the 5F07D0 transition demonstrated the existence of multiple Eu3+ centers in the investigated GaN powder.

Original languageEnglish
Pages (from-to)97-102
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Publication statusPublished - 2009
Event2008 MRS Fall Meeting - Boston, MA, United States
Duration: 2008 Dec 22008 Dec 5

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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