Recrystallization of Si amorphized by Cu and Au ion implantation

K. Takahiro, T. Matsui, S. Nagata, S. Yamaguchi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The solid phase epitaxial growth (SPEG) of Si(100) preamorphized by Cu and Au ion implantation has been studied with various analytical tools such as Rutherford backscattering-channelling, X-ray diffraction and electron microscopy. The presence of implanted metallic atoms in a concentration above a critical value hinders the SPEG. It is found that the critical concentration depends on the composition as well as the structure of the amorphous (a-) Si layer at various annealing stages. High dose (greater than 4 × 1016 cm-2) implantation causes the precipitation of implanted impurities in the a-Si layer, which accelerates the random crystallization. We conclude therefore that the precipitation of the metallic solute controls the competition between SPEG and random crystallization in a-Si.

Original languageEnglish
Pages (from-to)408-410
Number of pages3
JournalSurface and Coatings Technology
Volume66
Issue number1-3
DOIs
Publication statusPublished - 1994 Aug

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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