Recombination-enhanced dislocation motion in SiGe and Ge

I. Yonenaga, M. Werner, M. Bartsch, U. Messerschmidt, E. R. Weber

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


In-situ straining experiments on dislocation motion in Ge and Si-5 at% Ge alloy single crystals are performed in a high voltage transmission electron microscope. In comparison with previous results by other methods, the dislocation velocities are found to be enhanced due to a recombination enhancement owing to the excess carrier injection by the electron beam. The reduction in the activation energy of dislocation motion is ascribed to the recombination-assisted kink formation. The kink migration energy is estimated to be 0.7 eV in Ge and 1.5 eV in SiGe.

Original languageEnglish
Pages (from-to)35-40
Number of pages6
JournalPhysica Status Solidi (A) Applied Research
Issue number1
Publication statusPublished - 1999 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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