Recent progresses in STT-MRAM and SOT-MRAM for next generation MRAM

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In last decade, since high performance MTJ using CoFeB/MgO-based interfacial perpendicular magnetic anisotropy (IPMA) is utilized, STT-MRAM technology has rapidly progressed and mass-production of STT-MRAM has already started in the semiconductor companies. However, for further expansion of MRAM applications and markets, higher reliability, larger capacity or speed are required. In this invited paper, we describe our recent progresses in STT-/SOT-MRAM fabricated under developed 300mm integration process (PVD, RIE etc.) [4] with advanced spintronics device technologies, such as quad-interface MTJ [10] and canted SOT device [12].

Original languageEnglish
Title of host publication2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728164601
DOIs
Publication statusPublished - 2020 Jun
Event2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Honolulu, United States
Duration: 2020 Jun 162020 Jun 19

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2020-June
ISSN (Print)0743-1562

Conference

Conference2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020
CountryUnited States
CityHonolulu
Period20/6/1620/6/19

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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