Recent progresses in STT-MRAM and SOT-MRAM for next generation MRAM

Tetsuo Endoh; Hiroaki Honjo; Koichi Nishioka; Shoji Ikeda

doi:10.1109/VLSITechnology18217.2020.9265042

Recent progresses in STT-MRAM and SOT-MRAM for next generation MRAM

Tetsuo Endoh, Hiroaki Honjo, Koichi Nishioka, Shoji Ikeda

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In last decade, since high performance MTJ using CoFeB/MgO-based interfacial perpendicular magnetic anisotropy (IPMA) is utilized, STT-MRAM technology has rapidly progressed and mass-production of STT-MRAM has already started in the semiconductor companies. However, for further expansion of MRAM applications and markets, higher reliability, larger capacity or speed are required. In this invited paper, we describe our recent progresses in STT-/SOT-MRAM fabricated under developed 300mm integration process (PVD, RIE etc.) [4] with advanced spintronics device technologies, such as quad-interface MTJ [10] and canted SOT device [12].

Original language	English
Title of host publication	2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728164601
DOIs	https://doi.org/10.1109/VLSITechnology18217.2020.9265042
Publication status	Published - 2020 Jun
Event	2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Honolulu, United States Duration: 2020 Jun 16 → 2020 Jun 19

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2020-June
ISSN (Print)	0743-1562

Conference

Conference	2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020
Country	United States
City	Honolulu
Period	20/6/16 → 20/6/19

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/VLSITechnology18217.2020.9265042

Fingerprint Dive into the research topics of 'Recent progresses in STT-MRAM and SOT-MRAM for next generation MRAM'. Together they form a unique fingerprint.

Cite this

Endoh, T., Honjo, H., Nishioka, K., & Ikeda, S. (2020). Recent progresses in STT-MRAM and SOT-MRAM for next generation MRAM. In 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings [9265042] (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2020-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSITechnology18217.2020.9265042

Recent progresses in STT-MRAM and SOT-MRAM for next generation MRAM. / Endoh, Tetsuo ; Honjo, Hiroaki; Nishioka, Koichi; Ikeda, Shoji.

2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. 9265042 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2020-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Endoh, T , Honjo, H, Nishioka, K & Ikeda, S 2020, Recent progresses in STT-MRAM and SOT-MRAM for next generation MRAM. in 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings., 9265042, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2020-June, Institute of Electrical and Electronics Engineers Inc., 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020, Honolulu, United States, 20/6/16. https://doi.org/10.1109/VLSITechnology18217.2020.9265042

Endoh T , Honjo H, Nishioka K, Ikeda S. Recent progresses in STT-MRAM and SOT-MRAM for next generation MRAM. In 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2020. 9265042. (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSITechnology18217.2020.9265042

@inproceedings{9fb02c5943c74f42a9a0b470beec0715,

title = "Recent progresses in STT-MRAM and SOT-MRAM for next generation MRAM",

abstract = "In last decade, since high performance MTJ using CoFeB/MgO-based interfacial perpendicular magnetic anisotropy (IPMA) is utilized, STT-MRAM technology has rapidly progressed and mass-production of STT-MRAM has already started in the semiconductor companies. However, for further expansion of MRAM applications and markets, higher reliability, larger capacity or speed are required. In this invited paper, we describe our recent progresses in STT-/SOT-MRAM fabricated under developed 300mm integration process (PVD, RIE etc.) [4] with advanced spintronics device technologies, such as quad-interface MTJ [10] and canted SOT device [12]. ",

author = "Tetsuo Endoh and Hiroaki Honjo and Koichi Nishioka and Shoji Ikeda",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 ; Conference date: 16-06-2020 Through 19-06-2020",

year = "2020",

month = jun,

doi = "10.1109/VLSITechnology18217.2020.9265042",

language = "English",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings",

}

TY - GEN

T1 - Recent progresses in STT-MRAM and SOT-MRAM for next generation MRAM

AU - Endoh, Tetsuo

AU - Honjo, Hiroaki

AU - Nishioka, Koichi

AU - Ikeda, Shoji

PY - 2020/6

Y1 - 2020/6

N2 - In last decade, since high performance MTJ using CoFeB/MgO-based interfacial perpendicular magnetic anisotropy (IPMA) is utilized, STT-MRAM technology has rapidly progressed and mass-production of STT-MRAM has already started in the semiconductor companies. However, for further expansion of MRAM applications and markets, higher reliability, larger capacity or speed are required. In this invited paper, we describe our recent progresses in STT-/SOT-MRAM fabricated under developed 300mm integration process (PVD, RIE etc.) [4] with advanced spintronics device technologies, such as quad-interface MTJ [10] and canted SOT device [12].

AB - In last decade, since high performance MTJ using CoFeB/MgO-based interfacial perpendicular magnetic anisotropy (IPMA) is utilized, STT-MRAM technology has rapidly progressed and mass-production of STT-MRAM has already started in the semiconductor companies. However, for further expansion of MRAM applications and markets, higher reliability, larger capacity or speed are required. In this invited paper, we describe our recent progresses in STT-/SOT-MRAM fabricated under developed 300mm integration process (PVD, RIE etc.) [4] with advanced spintronics device technologies, such as quad-interface MTJ [10] and canted SOT device [12].

UR - http://www.scopus.com/inward/record.url?scp=85098193487&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85098193487&partnerID=8YFLogxK

U2 - 10.1109/VLSITechnology18217.2020.9265042

DO - 10.1109/VLSITechnology18217.2020.9265042

M3 - Conference contribution

AN - SCOPUS:85098193487

T3 - Digest of Technical Papers - Symposium on VLSI Technology

BT - 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020

Y2 - 16 June 2020 through 19 June 2020

ER -