Recent progress of perpendicular anisotropy magnetic tunnel junctions for nonvolatile vlsi

Shoji Ikeda, Hideo Sato, Michihiko Yamanouchi, Huadong Gan, Katsuya Miura, Kotaro Mizunuma, Shun Kanai, Shunsuke Fukami, Fumihiro Matsukura, Naoki Kasai, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

54 Citations (Scopus)

Abstract

We review recent developments in magnetic tunnel junctions with perpendicular easy axis (p-MTJs) for nonvolatile very large scale integrated circuits (VLSIs). So far, a number of material systems such as rare-earth/transition metal alloys, L10-ordered (Co, Fe)-Pt alloys, Co/(Pd, Pt) multilayers, and ferromagnetic-alloy/oxide stacks have been proposed as electrodes in p-MTJs. Among them, p-MTJs with single or double ferromagnetic-alloy/oxide stacks, particularly CoFeB-MgO, were shown to have high potential to satisfy major requirements for integration.

Original languageEnglish
Article number1240003
JournalSPIN
Volume2
Issue number3
DOIs
Publication statusPublished - 2012 Sep 1

Keywords

  • CoFeB
  • Magnetic tunnel junction
  • MgO
  • perpendicular anisotropy
  • spin transfer torque

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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