Abstract
3D integration technology is the key for future LSIs with highperformance, low-power and multi-functionality. Especially, to mitigate various concerns caused by device scaling down to 10 nm or less, it is indispensable to introduce a new concept of heterogeneous 3D integration in which various kinds of materials, devices and technologies are integrated on a Si substrate. Future prospects of such a heterogeneous 3D integration technology has been discussed representing typical examples of heterogeneous 3D LSIs after the present situation of 3D integration technology is described.
| Original language | English |
|---|---|
| Article number | 20152001 |
| Journal | IEICE Electronics Express |
| Volume | 12 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2015 Apr 10 |
Keywords
- 3D DRAM
- 3D image sensor
- 3D integration
- 3D microprocessor
- Heterogeneous integration
- TSV
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering