Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors

I. Yonenaga, Y. Ohno, T. Taishi, Y. Tokumoto

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


The mechanical strengths and dislocation activities in wide band-gap semiconductors SiC, AlN, GaN, ZnO and ZnSe at elevated temperatures are summarized. From investigations by indentation hardness test and compressive deformation, activation energies for dislocation motion are evaluated to be 2-2.7, 0.7-1.2 and 0.5-0.7 eV in GaN, ZnO and ZnSe, respectively. Dislocations in II-VI compounds ZnO and ZnSe are essentially mobile.

Original languageEnglish
Pages (from-to)4999-5001
Number of pages3
JournalPhysica B: Condensed Matter
Issue number23-24
Publication statusPublished - 2009 Dec 15


  • Dislocation mobility
  • Mechanical stability
  • Wide band-gap semiconductors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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