Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors

I. Yonenaga, Y. Ohno, T. Taishi, Y. Tokumoto

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The mechanical strengths and dislocation activities in wide band-gap semiconductors SiC, AlN, GaN, ZnO and ZnSe at elevated temperatures are summarized. From investigations by indentation hardness test and compressive deformation, activation energies for dislocation motion are evaluated to be 2-2.7, 0.7-1.2 and 0.5-0.7 eV in GaN, ZnO and ZnSe, respectively. Dislocations in II-VI compounds ZnO and ZnSe are essentially mobile.

Original languageEnglish
Pages (from-to)4999-5001
Number of pages3
JournalPhysica B: Condensed Matter
Volume404
Issue number23-24
DOIs
Publication statusPublished - 2009 Dec 15

Keywords

  • Dislocation mobility
  • Mechanical stability
  • Wide band-gap semiconductors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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