Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors

I. Yonenaga; Y. Ohno; T. Taishi; Y. Tokumoto

doi:10.1016/j.physb.2009.08.196

Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors

I. Yonenaga, Y. Ohno, T. Taishi, Y. Tokumoto

Materials Design Division

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The mechanical strengths and dislocation activities in wide band-gap semiconductors SiC, AlN, GaN, ZnO and ZnSe at elevated temperatures are summarized. From investigations by indentation hardness test and compressive deformation, activation energies for dislocation motion are evaluated to be 2-2.7, 0.7-1.2 and 0.5-0.7 eV in GaN, ZnO and ZnSe, respectively. Dislocations in II-VI compounds ZnO and ZnSe are essentially mobile.

Original language	English
Pages (from-to)	4999-5001
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	404
Issue number	23-24
DOIs	https://doi.org/10.1016/j.physb.2009.08.196
Publication status	Published - 2009 Dec 15

Keywords

Dislocation mobility
Mechanical stability
Wide band-gap semiconductors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2009.08.196

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@article{9452683102f243e6bb68532f48e2790e,

title = "Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors",

abstract = "The mechanical strengths and dislocation activities in wide band-gap semiconductors SiC, AlN, GaN, ZnO and ZnSe at elevated temperatures are summarized. From investigations by indentation hardness test and compressive deformation, activation energies for dislocation motion are evaluated to be 2-2.7, 0.7-1.2 and 0.5-0.7 eV in GaN, ZnO and ZnSe, respectively. Dislocations in II-VI compounds ZnO and ZnSe are essentially mobile.",

keywords = "Dislocation mobility, Mechanical stability, Wide band-gap semiconductors",

author = "I. Yonenaga and Y. Ohno and T. Taishi and Y. Tokumoto",

year = "2009",

month = dec,

day = "15",

doi = "10.1016/j.physb.2009.08.196",

language = "English",

volume = "404",

pages = "4999--5001",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "23-24",

}

TY - JOUR

T1 - Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors

AU - Yonenaga, I.

AU - Ohno, Y.

AU - Taishi, T.

AU - Tokumoto, Y.

PY - 2009/12/15

Y1 - 2009/12/15

N2 - The mechanical strengths and dislocation activities in wide band-gap semiconductors SiC, AlN, GaN, ZnO and ZnSe at elevated temperatures are summarized. From investigations by indentation hardness test and compressive deformation, activation energies for dislocation motion are evaluated to be 2-2.7, 0.7-1.2 and 0.5-0.7 eV in GaN, ZnO and ZnSe, respectively. Dislocations in II-VI compounds ZnO and ZnSe are essentially mobile.

AB - The mechanical strengths and dislocation activities in wide band-gap semiconductors SiC, AlN, GaN, ZnO and ZnSe at elevated temperatures are summarized. From investigations by indentation hardness test and compressive deformation, activation energies for dislocation motion are evaluated to be 2-2.7, 0.7-1.2 and 0.5-0.7 eV in GaN, ZnO and ZnSe, respectively. Dislocations in II-VI compounds ZnO and ZnSe are essentially mobile.

KW - Dislocation mobility

KW - Mechanical stability

KW - Wide band-gap semiconductors

UR - http://www.scopus.com/inward/record.url?scp=74349127290&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=74349127290&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2009.08.196

DO - 10.1016/j.physb.2009.08.196

M3 - Article

AN - SCOPUS:74349127290

VL - 404

SP - 4999

EP - 5001

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 23-24

ER -

Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors

Abstract

Keywords

ASJC Scopus subject areas

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