Abstract
The mechanical strengths and dislocation activities in wide band-gap semiconductors SiC, AlN, GaN, ZnO and ZnSe at elevated temperatures are summarized. From investigations by indentation hardness test and compressive deformation, activation energies for dislocation motion are evaluated to be 2-2.7, 0.7-1.2 and 0.5-0.7 eV in GaN, ZnO and ZnSe, respectively. Dislocations in II-VI compounds ZnO and ZnSe are essentially mobile.
| Original language | English |
|---|---|
| Pages (from-to) | 4999-5001 |
| Number of pages | 3 |
| Journal | Physica B: Condensed Matter |
| Volume | 404 |
| Issue number | 23-24 |
| DOIs | |
| Publication status | Published - 2009 Dec 15 |
Keywords
- Dislocation mobility
- Mechanical stability
- Wide band-gap semiconductors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Yonenaga, I., Ohno, Y., Taishi, T., & Tokumoto, Y. (2009). Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors. Physica B: Condensed Matter, 404(23-24), 4999-5001. https://doi.org/10.1016/j.physb.2009.08.196