Recent achievements in the reliability of InP-based HEMTs

Tetsuya Suemitsu

doi:10.1016/j.tsf.2006.07.108

Recent achievements in the reliability of InP-based HEMTs

Tetsuya Suemitsu

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The current understanding of reliability issues for InP HEMTs is reviewed. To date, the origin of some instability and degradation phenomena have been identified and the solutions to eliminate or mitigate them have been found. On the other hand, some degradation phenomena are quite complicated and are still under investigation. The increase of drain resistance is one of them. This might be related to the hot electron effect, but it is still an open question as to where and how it happens. Some efforts at solving this mystery, including cathodoluminescence studies, are presented.

Original language	English
Pages (from-to)	4378-4383
Number of pages	6
Journal	Thin Solid Films
Volume	515
Issue number	10
DOIs	https://doi.org/10.1016/j.tsf.2006.07.108
Publication status	Published - 2007 Mar 26
Externally published	Yes

Keywords

FET
HEMT
InP
Reliability

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2006.07.108

Fingerprint Dive into the research topics of 'Recent achievements in the reliability of InP-based HEMTs'. Together they form a unique fingerprint.

Cite this

@article{56f60c1359004d02b047b66a2e0926e3,

title = "Recent achievements in the reliability of InP-based HEMTs",

abstract = "The current understanding of reliability issues for InP HEMTs is reviewed. To date, the origin of some instability and degradation phenomena have been identified and the solutions to eliminate or mitigate them have been found. On the other hand, some degradation phenomena are quite complicated and are still under investigation. The increase of drain resistance is one of them. This might be related to the hot electron effect, but it is still an open question as to where and how it happens. Some efforts at solving this mystery, including cathodoluminescence studies, are presented.",

keywords = "FET, HEMT, InP, Reliability",

author = "Tetsuya Suemitsu",

year = "2007",

month = mar,

day = "26",

doi = "10.1016/j.tsf.2006.07.108",

language = "English",

volume = "515",

pages = "4378--4383",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "10",

}

TY - JOUR

T1 - Recent achievements in the reliability of InP-based HEMTs

AU - Suemitsu, Tetsuya

PY - 2007/3/26

Y1 - 2007/3/26

N2 - The current understanding of reliability issues for InP HEMTs is reviewed. To date, the origin of some instability and degradation phenomena have been identified and the solutions to eliminate or mitigate them have been found. On the other hand, some degradation phenomena are quite complicated and are still under investigation. The increase of drain resistance is one of them. This might be related to the hot electron effect, but it is still an open question as to where and how it happens. Some efforts at solving this mystery, including cathodoluminescence studies, are presented.

AB - The current understanding of reliability issues for InP HEMTs is reviewed. To date, the origin of some instability and degradation phenomena have been identified and the solutions to eliminate or mitigate them have been found. On the other hand, some degradation phenomena are quite complicated and are still under investigation. The increase of drain resistance is one of them. This might be related to the hot electron effect, but it is still an open question as to where and how it happens. Some efforts at solving this mystery, including cathodoluminescence studies, are presented.

KW - FET

KW - HEMT

KW - InP

KW - Reliability

UR - http://www.scopus.com/inward/record.url?scp=33847080097&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847080097&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2006.07.108

DO - 10.1016/j.tsf.2006.07.108

M3 - Article

AN - SCOPUS:33847080097

VL - 515

SP - 4378

EP - 4383

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 10

ER -