TY - GEN
T1 - Rearrangement of Crystal Lattice Occurred at Ag/Ag Bonded Interface in Atomic Diffusion Bonding
AU - Matsuda, S.
AU - Uomoto, M.
AU - Miura, A.
AU - Shimatsu, T.
N1 - Funding Information:
This work was supported by Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), “Energy systems toward a decarbonized society” (Funding agency: JST).
Publisher Copyright:
© 2019 JSPS 191st Committee on Innovative Interface Bonding Technology.
PY - 2019/5
Y1 - 2019/5
N2 - We used Ag films to study atomic diffusion bonding (ADB) of wafers in vacuum. Results showed remarkable crystal lattice rearrangement at room temperature over depth of 50 nm from the connected Ag/Ag film interface, implying high bonding potential using Ag film in ADB.
AB - We used Ag films to study atomic diffusion bonding (ADB) of wafers in vacuum. Results showed remarkable crystal lattice rearrangement at room temperature over depth of 50 nm from the connected Ag/Ag film interface, implying high bonding potential using Ag film in ADB.
UR - http://www.scopus.com/inward/record.url?scp=85068409423&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85068409423&partnerID=8YFLogxK
U2 - 10.23919/LTB-3D.2019.8735204
DO - 10.23919/LTB-3D.2019.8735204
M3 - Conference contribution
AN - SCOPUS:85068409423
T3 - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
SP - 67
BT - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Y2 - 21 May 2019 through 25 May 2019
ER -