Rearrangement of Crystal Lattice Occurred at Ag/Ag Bonded Interface in Atomic Diffusion Bonding

S. Matsuda; M. Uomoto; A. Miura; T. Shimatsu

doi:10.23919/LTB-3D.2019.8735204

Rearrangement of Crystal Lattice Occurred at Ag/Ag Bonded Interface in Atomic Diffusion Bonding

S. Matsuda, M. Uomoto, A. Miura, T. Shimatsu

Advanced Interdisciplinary Research Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We used Ag films to study atomic diffusion bonding (ADB) of wafers in vacuum. Results showed remarkable crystal lattice rearrangement at room temperature over depth of 50 nm from the connected Ag/Ag film interface, implying high bonding potential using Ag film in ADB.

Original language	English
Title of host publication	Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Number of pages	1
ISBN (Electronic)	9784904743072
DOIs	https://doi.org/10.23919/LTB-3D.2019.8735204
Publication status	Published - 2019 May
Event	6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan Duration: 2019 May 21 → 2019 May 25

Publication series

Name	Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference	6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Country	Japan
City	Kanazawa, Ishikawa
Period	19/5/21 → 19/5/25

ASJC Scopus subject areas

Process Chemistry and Technology
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.23919/LTB-3D.2019.8735204

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Cite this

Matsuda, S., Uomoto, M., Miura, A., & Shimatsu, T. (2019). Rearrangement of Crystal Lattice Occurred at Ag/Ag Bonded Interface in Atomic Diffusion Bonding. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 [8735204] (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2019.8735204

Rearrangement of Crystal Lattice Occurred at Ag/Ag Bonded Interface in Atomic Diffusion Bonding. / Matsuda, S.; Uomoto, M.; Miura, A.; Shimatsu, T.

Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8735204 (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsuda, S, Uomoto, M, Miura, A & Shimatsu, T 2019, Rearrangement of Crystal Lattice Occurred at Ag/Ag Bonded Interface in Atomic Diffusion Bonding. in Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019., 8735204, Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Institute of Electrical and Electronics Engineers Inc., 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Kanazawa, Ishikawa, Japan, 19/5/21. https://doi.org/10.23919/LTB-3D.2019.8735204

Matsuda S, Uomoto M, Miura A, Shimatsu T. Rearrangement of Crystal Lattice Occurred at Ag/Ag Bonded Interface in Atomic Diffusion Bonding. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8735204. (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). https://doi.org/10.23919/LTB-3D.2019.8735204

Matsuda, S. ; Uomoto, M. ; Miura, A. ; Shimatsu, T. / Rearrangement of Crystal Lattice Occurred at Ag/Ag Bonded Interface in Atomic Diffusion Bonding. Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).

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abstract = "We used Ag films to study atomic diffusion bonding (ADB) of wafers in vacuum. Results showed remarkable crystal lattice rearrangement at room temperature over depth of 50 nm from the connected Ag/Ag film interface, implying high bonding potential using Ag film in ADB.",

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