Rearrangement of crystal lattice at a Ag/Ag and Au/Au bonded interface in atomic diffusion bonding

Shigenobu Matsuda, Miyuki Uomoto, Ayaka Miura, Takehito Shimatsu

Research output: Contribution to journalArticle

Abstract

This study examines atomic diffusion bonding (ADB) of wafers using Ag and Au films in vacuum at room temperature. Transmission electron microscopic images show remarkable crystal lattice rearrangement that occurs at depths greater than 50 nm from the connected Ag/Ag film interface. The Au/Au interface fluctuation attributable to the crystal lattice rearrangement is 5-10 nm. X-ray diffraction reveals that the crystal lattice rearrangement for Ag/Ag interface occurs remarkably at thicknesses of less than 150 nm, indicating high bonding potential when using Ag films in ADB. Large surface roughness in the thick film region probably suppresses the crystal lattice rearrangement.

Original languageEnglish
Article numberSBBC01
JournalJapanese journal of applied physics
Volume59
Issue numberSB
DOIs
Publication statusPublished - 2020 Feb 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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