TY - JOUR
T1 - Rearrangement of crystal lattice at a Ag/Ag and Au/Au bonded interface in atomic diffusion bonding
AU - Matsuda, Shigenobu
AU - Uomoto, Miyuki
AU - Miura, Ayaka
AU - Shimatsu, Takehito
PY - 2020/2/1
Y1 - 2020/2/1
N2 - This study examines atomic diffusion bonding (ADB) of wafers using Ag and Au films in vacuum at room temperature. Transmission electron microscopic images show remarkable crystal lattice rearrangement that occurs at depths greater than 50 nm from the connected Ag/Ag film interface. The Au/Au interface fluctuation attributable to the crystal lattice rearrangement is 5-10 nm. X-ray diffraction reveals that the crystal lattice rearrangement for Ag/Ag interface occurs remarkably at thicknesses of less than 150 nm, indicating high bonding potential when using Ag films in ADB. Large surface roughness in the thick film region probably suppresses the crystal lattice rearrangement.
AB - This study examines atomic diffusion bonding (ADB) of wafers using Ag and Au films in vacuum at room temperature. Transmission electron microscopic images show remarkable crystal lattice rearrangement that occurs at depths greater than 50 nm from the connected Ag/Ag film interface. The Au/Au interface fluctuation attributable to the crystal lattice rearrangement is 5-10 nm. X-ray diffraction reveals that the crystal lattice rearrangement for Ag/Ag interface occurs remarkably at thicknesses of less than 150 nm, indicating high bonding potential when using Ag films in ADB. Large surface roughness in the thick film region probably suppresses the crystal lattice rearrangement.
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U2 - 10.7567/1347-4065/ab4f27
DO - 10.7567/1347-4065/ab4f27
M3 - Article
AN - SCOPUS:85081951273
VL - 59
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - SB
M1 - SBBC01
ER -