Realizing p-type Mg2Sn Thermoelectrics via Ga-Doping and Point Defect Engineering

Zhicheng Huang, Kei Hayashi, Wataru Saito, Yuzuru Miyazaki

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Mg2Sn is a promising middle-temperature thermoelectric material consisting of earth-abundant, low-cost, and nontoxic elements. To obtain p-type Mg2Sn, a series of Mg2Sn1-xGax (x = 0, 0.005, 0.01, 0.02, and 0.03) ingots were synthesized by melting them under an Ar atmosphere. It was found that the ingots with x ≤ 0.02 were single crystals with Mg vacancies (VMg) as point defects. Ga doping increased chemical pressure, leading to an increase in the VMg fraction, and it also introduced hole carriers in Mg2Sn, which changed its conduction type from n-type to p-type. A maximum zT value of 0.18 at 450 K was obtained for p-type Mg2Sn0.98Ga0.02 single crystals, which had a lower total thermal conductivity than some other p-type Mg2Sn-based polycrystals.

Original languageEnglish
Pages (from-to)13044-13050
Number of pages7
JournalACS Applied Energy Materials
Issue number11
Publication statusPublished - 2021 Nov 22


  • Ga-doping
  • MgSn
  • chemical pressure
  • point defects
  • thermoelectric properties

ASJC Scopus subject areas

  • Chemical Engineering (miscellaneous)
  • Energy Engineering and Power Technology
  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Chemistry


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