Realizing p-type Mg2Sn Thermoelectrics via Ga-Doping and Point Defect Engineering

Zhicheng Huang; Kei Hayashi; Wataru Saito; Yuzuru Miyazaki

doi:10.1021/acsaem.1c02678

Realizing p-type Mg₂Sn Thermoelectrics via Ga-Doping and Point Defect Engineering

Zhicheng Huang, Kei Hayashi, Wataru Saito, Yuzuru Miyazaki

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Mg2Sn is a promising middle-temperature thermoelectric material consisting of earth-abundant, low-cost, and nontoxic elements. To obtain p-type Mg2Sn, a series of Mg2Sn1-xGax (x = 0, 0.005, 0.01, 0.02, and 0.03) ingots were synthesized by melting them under an Ar atmosphere. It was found that the ingots with x ≤ 0.02 were single crystals with Mg vacancies (VMg) as point defects. Ga doping increased chemical pressure, leading to an increase in the VMg fraction, and it also introduced hole carriers in Mg2Sn, which changed its conduction type from n-type to p-type. A maximum zT value of 0.18 at 450 K was obtained for p-type Mg2Sn0.98Ga0.02 single crystals, which had a lower total thermal conductivity than some other p-type Mg2Sn-based polycrystals.

Original language	English
Pages (from-to)	13044-13050
Number of pages	7
Journal	ACS Applied Energy Materials
Volume	4
Issue number	11
DOIs	https://doi.org/10.1021/acsaem.1c02678
Publication status	Published - 2021 Nov 22

Keywords

Ga-doping
MgSn
chemical pressure
point defects
thermoelectric properties

ASJC Scopus subject areas

Chemical Engineering (miscellaneous)
Energy Engineering and Power Technology
Electrochemistry
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1021/acsaem.1c02678

Cite this

@article{349c6aea10f94b2cb185645e4d2959cd,

title = "Realizing p-type Mg2Sn Thermoelectrics via Ga-Doping and Point Defect Engineering",

abstract = "Mg2Sn is a promising middle-temperature thermoelectric material consisting of earth-abundant, low-cost, and nontoxic elements. To obtain p-type Mg2Sn, a series of Mg2Sn1-xGax (x = 0, 0.005, 0.01, 0.02, and 0.03) ingots were synthesized by melting them under an Ar atmosphere. It was found that the ingots with x ≤ 0.02 were single crystals with Mg vacancies (VMg) as point defects. Ga doping increased chemical pressure, leading to an increase in the VMg fraction, and it also introduced hole carriers in Mg2Sn, which changed its conduction type from n-type to p-type. A maximum zT value of 0.18 at 450 K was obtained for p-type Mg2Sn0.98Ga0.02 single crystals, which had a lower total thermal conductivity than some other p-type Mg2Sn-based polycrystals.",

keywords = "Ga-doping, MgSn, chemical pressure, point defects, thermoelectric properties",

author = "Zhicheng Huang and Kei Hayashi and Wataru Saito and Yuzuru Miyazaki",

note = "Funding Information: This work was partly supported by the Grant-in-Aid for JSPS Fellows (no. 20J10512), Grant-in-Aid for Scientific Research (B) (no. 17H03398), and Grant-in-Aid for Scientific Research on Innovative Areas (no. 17H05207) from the Ministry of Education, Culture, Sports, Science, and Technology (MEXT) of Japan. This work was partly based on collaborative research between Sumitomo Metal Mining Co., Ltd. and Tohoku University, which is part of the vision co-creation partnership. Publisher Copyright: {\textcopyright} 2021 American Chemical Society.",

year = "2021",

month = nov,

day = "22",

doi = "10.1021/acsaem.1c02678",

language = "English",

volume = "4",

pages = "13044--13050",

journal = "ACS Applied Energy Materials",

issn = "2574-0962",

publisher = "American Chemical Society",

number = "11",

}

TY - JOUR

T1 - Realizing p-type Mg2Sn Thermoelectrics via Ga-Doping and Point Defect Engineering

AU - Huang, Zhicheng

AU - Hayashi, Kei

AU - Saito, Wataru

AU - Miyazaki, Yuzuru

N1 - Funding Information: This work was partly supported by the Grant-in-Aid for JSPS Fellows (no. 20J10512), Grant-in-Aid for Scientific Research (B) (no. 17H03398), and Grant-in-Aid for Scientific Research on Innovative Areas (no. 17H05207) from the Ministry of Education, Culture, Sports, Science, and Technology (MEXT) of Japan. This work was partly based on collaborative research between Sumitomo Metal Mining Co., Ltd. and Tohoku University, which is part of the vision co-creation partnership. Publisher Copyright: © 2021 American Chemical Society.

PY - 2021/11/22

Y1 - 2021/11/22

N2 - Mg2Sn is a promising middle-temperature thermoelectric material consisting of earth-abundant, low-cost, and nontoxic elements. To obtain p-type Mg2Sn, a series of Mg2Sn1-xGax (x = 0, 0.005, 0.01, 0.02, and 0.03) ingots were synthesized by melting them under an Ar atmosphere. It was found that the ingots with x ≤ 0.02 were single crystals with Mg vacancies (VMg) as point defects. Ga doping increased chemical pressure, leading to an increase in the VMg fraction, and it also introduced hole carriers in Mg2Sn, which changed its conduction type from n-type to p-type. A maximum zT value of 0.18 at 450 K was obtained for p-type Mg2Sn0.98Ga0.02 single crystals, which had a lower total thermal conductivity than some other p-type Mg2Sn-based polycrystals.

AB - Mg2Sn is a promising middle-temperature thermoelectric material consisting of earth-abundant, low-cost, and nontoxic elements. To obtain p-type Mg2Sn, a series of Mg2Sn1-xGax (x = 0, 0.005, 0.01, 0.02, and 0.03) ingots were synthesized by melting them under an Ar atmosphere. It was found that the ingots with x ≤ 0.02 were single crystals with Mg vacancies (VMg) as point defects. Ga doping increased chemical pressure, leading to an increase in the VMg fraction, and it also introduced hole carriers in Mg2Sn, which changed its conduction type from n-type to p-type. A maximum zT value of 0.18 at 450 K was obtained for p-type Mg2Sn0.98Ga0.02 single crystals, which had a lower total thermal conductivity than some other p-type Mg2Sn-based polycrystals.

KW - Ga-doping

KW - MgSn

KW - chemical pressure

KW - point defects

KW - thermoelectric properties

UR - http://www.scopus.com/inward/record.url?scp=85118683844&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85118683844&partnerID=8YFLogxK

U2 - 10.1021/acsaem.1c02678

DO - 10.1021/acsaem.1c02678

M3 - Article

AN - SCOPUS:85118683844

SN - 2574-0962

VL - 4

SP - 13044

EP - 13050

JO - ACS Applied Energy Materials

JF - ACS Applied Energy Materials

IS - 11

ER -