Realization of one-chip-two-wavelength light sources

J. S. Song; M. W. Cho; D. C. Oh; H. Makino; T. Hanada; B. P. Zhang; Y. Segawa; H. S. Song; I. S. Cho; J. H. Chang; T. Yao

doi:10.1016/j.mssp.2003.05.001

Realization of one-chip-two-wavelength light sources

J. S. Song, M. W. Cho, D. C. Oh, H. Makino, T. Hanada, B. P. Zhang, Y. Segawa, H. S. Song, I. S. Cho, J. H. Chang, T. Yao

Materials Design Division

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We proposed a vertically integrated one-chip-two-wavelength light source which consists of a separate confinement single-quantum-well (SCH-SQW) ZnCdSe/ZnSe/ZnMgBeSe heterostructure for blue-green light emitters grown on SCH-MQW InGaP/InGaAlP for red light-emitting devices. We investigated, firstly, the effect of a thin low-temperature-grown ZnSe buffer layers (LT-ZnSe) in improving ZnSe crystallinity by inserting it between the high-temperature-grown ZnSe epilayer and the GaAs substrate, secondly, the growth optimization of LT-ZnSe on tilted GaAs (001) substrate, and lastly, the molecular beam epitaxy growth and characterization of ZnCdSe/ZnSe/ZnMgBeSe quantum well structures on metal organic chemical vapor deposition (MOCVD) grown III-V red light emitters. Optically pumped lasing is achieved from II-VI and III-V laser structures on one chip at room temperature. The present results clearly show the feasibility of epitaxial integration of II-VI and III-V laser structures.

Original language	English
Pages (from-to)	561-565
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	6
Issue number	5-6
DOIs	https://doi.org/10.1016/j.mssp.2003.05.001
Publication status	Published - 2003 Oct

Keywords

Molecular beam epitaxy
Semiconducting II-VI materials

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2003.05.001

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@article{598f0675aca2463b9e989ffefa2a1ebb,

title = "Realization of one-chip-two-wavelength light sources",

abstract = "We proposed a vertically integrated one-chip-two-wavelength light source which consists of a separate confinement single-quantum-well (SCH-SQW) ZnCdSe/ZnSe/ZnMgBeSe heterostructure for blue-green light emitters grown on SCH-MQW InGaP/InGaAlP for red light-emitting devices. We investigated, firstly, the effect of a thin low-temperature-grown ZnSe buffer layers (LT-ZnSe) in improving ZnSe crystallinity by inserting it between the high-temperature-grown ZnSe epilayer and the GaAs substrate, secondly, the growth optimization of LT-ZnSe on tilted GaAs (001) substrate, and lastly, the molecular beam epitaxy growth and characterization of ZnCdSe/ZnSe/ZnMgBeSe quantum well structures on metal organic chemical vapor deposition (MOCVD) grown III-V red light emitters. Optically pumped lasing is achieved from II-VI and III-V laser structures on one chip at room temperature. The present results clearly show the feasibility of epitaxial integration of II-VI and III-V laser structures.",

keywords = "Molecular beam epitaxy, Semiconducting II-VI materials",

author = "Song, {J. S.} and Cho, {M. W.} and Oh, {D. C.} and H. Makino and T. Hanada and Zhang, {B. P.} and Y. Segawa and Song, {H. S.} and Cho, {I. S.} and Chang, {J. H.} and T. Yao",

year = "2003",

month = oct,

doi = "10.1016/j.mssp.2003.05.001",

language = "English",

volume = "6",

pages = "561--565",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

number = "5-6",

}

TY - JOUR

T1 - Realization of one-chip-two-wavelength light sources

AU - Song, J. S.

AU - Cho, M. W.

AU - Oh, D. C.

AU - Makino, H.

AU - Hanada, T.

AU - Zhang, B. P.

AU - Segawa, Y.

AU - Song, H. S.

AU - Cho, I. S.

AU - Chang, J. H.

AU - Yao, T.

PY - 2003/10

Y1 - 2003/10

N2 - We proposed a vertically integrated one-chip-two-wavelength light source which consists of a separate confinement single-quantum-well (SCH-SQW) ZnCdSe/ZnSe/ZnMgBeSe heterostructure for blue-green light emitters grown on SCH-MQW InGaP/InGaAlP for red light-emitting devices. We investigated, firstly, the effect of a thin low-temperature-grown ZnSe buffer layers (LT-ZnSe) in improving ZnSe crystallinity by inserting it between the high-temperature-grown ZnSe epilayer and the GaAs substrate, secondly, the growth optimization of LT-ZnSe on tilted GaAs (001) substrate, and lastly, the molecular beam epitaxy growth and characterization of ZnCdSe/ZnSe/ZnMgBeSe quantum well structures on metal organic chemical vapor deposition (MOCVD) grown III-V red light emitters. Optically pumped lasing is achieved from II-VI and III-V laser structures on one chip at room temperature. The present results clearly show the feasibility of epitaxial integration of II-VI and III-V laser structures.

AB - We proposed a vertically integrated one-chip-two-wavelength light source which consists of a separate confinement single-quantum-well (SCH-SQW) ZnCdSe/ZnSe/ZnMgBeSe heterostructure for blue-green light emitters grown on SCH-MQW InGaP/InGaAlP for red light-emitting devices. We investigated, firstly, the effect of a thin low-temperature-grown ZnSe buffer layers (LT-ZnSe) in improving ZnSe crystallinity by inserting it between the high-temperature-grown ZnSe epilayer and the GaAs substrate, secondly, the growth optimization of LT-ZnSe on tilted GaAs (001) substrate, and lastly, the molecular beam epitaxy growth and characterization of ZnCdSe/ZnSe/ZnMgBeSe quantum well structures on metal organic chemical vapor deposition (MOCVD) grown III-V red light emitters. Optically pumped lasing is achieved from II-VI and III-V laser structures on one chip at room temperature. The present results clearly show the feasibility of epitaxial integration of II-VI and III-V laser structures.

KW - Molecular beam epitaxy

KW - Semiconducting II-VI materials

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U2 - 10.1016/j.mssp.2003.05.001

DO - 10.1016/j.mssp.2003.05.001

M3 - Article

AN - SCOPUS:12144287144

SN - 1369-8001

VL - 6

SP - 561

EP - 565

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 5-6

ER -

Realization of one-chip-two-wavelength light sources

Abstract

Keywords

ASJC Scopus subject areas

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