Realization of bulk multicrystalline silicon with controlled grain boundaries by utilizing spontaneous modification of grain boundary configuration

Noritaka Usami, Kentaro Kutsukake, Takamasa Sugawara, Kozo Fujiwara, Wugen Pan, Yoshitaro Nose, Toetsu Shishido, Kazuo Nakajima

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We succeeded in the realization of bulk multicrystalline silicon (mc-Si) with electrically inactive grain boundaries. A group of single-crystal Si wafers was used as an artificial multicrystalline seed with random grain boundaries. The crystal growth was carried out by the floating zone technique under ultrahigh vacuum at a growth rate of 1.0 mm/min. Under these conditions, most of the grain boundaries were spontaneously modified to ∑3. In contrast, random grain boundaries remained even after 40-mm growth when the growth rate was decreased to 0.2 mm/min. From these results, we suggest that the control of both the initial grain boundary configuration and the growth conditions is important to realize mc-Si with electrically inactive grain boundaries, which is a promising material for solar cell applications.

Original languageEnglish
Pages (from-to)1734-1737
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number3 A
DOIs
Publication statusPublished - 2006 Mar 8

Keywords

  • Floating zone technique
  • Multicrystalline Si
  • Random grain boundary
  • Solar cell
  • ∑3 grain boundary

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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