Realization of 10 Tbit in.2 memory density and subnanosecond domain switching time in ferroelectric data storage

Yasuo Cho, Sunao Hashimoto, Nozomi Odagawa, Kenkou Tanaka, Yoshiomi Hiranaga

Research output: Contribution to journalArticlepeer-review

62 Citations (Scopus)

Abstract

Nanosized inverted domain dots in ferroelectric materials have potential application in ultrahigh-density rewritable data storage systems. Herein, a data storage system is presented based on scanning nonlinear dielectric microscopy and a thin film of ferroelectric single-crystal lithium tantalite. Through domain engineering, nanosized inverted domain dots have been successfully formed at a data density above 10.1 Tbit in.2 and subnanosecond (500 ps) domain switching speed has been achieved. Moreover, actual information storage is demonstrated at a density of 1 Tbit in.2

Original languageEnglish
Article number232907
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number23
DOIs
Publication statusPublished - 2005 Dec 12

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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