Device restructuring by Tilted Well Implantation (TWI) was proposed for highly cost effective system LSIs. We demonstrated a 0.1 μm Buried-Channel (BC)-PMOSFET with a superior Ion/Ioff ratio, little threshold voltage (Vth) rolloff, and a low Vth using the TWI.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 1999 Dec 1|
|Event||Proceedings of the 1999 Symposium on VLSI Technology - Kyoto, Jpn|
Duration: 1999 Jun 14 → 1999 Jun 16
ASJC Scopus subject areas
- Electrical and Electronic Engineering