Abstract
Device restructuring by Tilted Well Implantation (TWI) was proposed for highly cost effective system LSIs. We demonstrated a 0.1 μm Buried-Channel (BC)-PMOSFET with a superior Ion/Ioff ratio, little threshold voltage (Vth) rolloff, and a low Vth using the TWI.
Original language | English |
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Pages (from-to) | 109-110 |
Number of pages | 2 |
Journal | Digest of Technical Papers - Symposium on VLSI Technology |
Publication status | Published - 1999 Dec 1 |
Externally published | Yes |
Event | Proceedings of the 1999 Symposium on VLSI Technology - Kyoto, Jpn Duration: 1999 Jun 14 → 1999 Jun 16 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering