Real-time photoluminescence and Raman spectral study of porous Si during F2 and H2O exposure

T. Wadayama, T. Arigane, K. Fujine, A. Hatta

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Photoluminescence (PL) and Raman spectral changes of porous silicon (PS) during exposure to F2 and H2O in succession have been investigated. An exposure to F2 under Ar+ laser (488 nm) irradiation at 373 K leads to significant changes in PL intensity and its peak position. PS samples before exposure to F2 exhibit a PL band at typically 750 nm. Upon exposure to F2 this band decreases in intensity and a PL band emerges at 600 nm. With increasing exposure, the 600 nm band increases to a maximum in intensity and then decreases to a minimum with a blue shift to 580 nm. A subsequent exposure to H2O vapor gives rise to a PL band at 740 nm whose intensity is much more intense than the PL band of the PS before F2 exposure. In spite of these PL spectral changes, the phonon band of the PS remains almost unchanged throughout these exposures, indicating that the average size of Si particles in the sample is almost constant. These results demonstrate that the PL is dominated by the surface chemical structure of the PS.

Original languageEnglish
Pages (from-to)111-116
Number of pages6
JournalJournal of Luminescence
Volume78
Issue number2
DOIs
Publication statusPublished - 1998 Mar 10

Keywords

  • Photoluminescence
  • Porous silicon
  • Quantum confinement
  • Raman scattering
  • Siloxene

ASJC Scopus subject areas

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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