Real-time observation of initial thermal oxidation on Si(110)-16×2 surface by photoemission spectroscopy

M. Suemitsu, A. Kato, H. Togashi, A. Konno, Y. Yamamoto, Y. Teraoka, A. Yoshigoe, Y. Enta, Y. Narita

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

Kinetics of initial oxidation of Si(110)-16×2 surface has been investigated by using real-time photoemission spectroscopy. One of the most striking features of Si(110) oxidation, in comparison with that of Si(001) surface, is the occurrence of an extremely rapid oxidation in its early stage. Only 15 s after introduction of ∼10-5 Pa oxygen molecules at 540°C, ∼30% of the Si(110) surface is covered with oxide. This rapid initial oxidation can be related to oxidation at or around the adatom clusters which are reportedly the major constituent of the 16×2 reconstruction on this Si(110) surface. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)311-316
Number of pages6
JournalECS Transactions
Volume3
Issue number2
DOIs
Publication statusPublished - 2006
EventAdvanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 2006 Oct 292006 Nov 3

ASJC Scopus subject areas

  • Engineering(all)

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