Real-time observation of initial thermal oxidation on Si(110)-16×2 surface by photoemission spectroscopy

M. Suemitsu; A. Kato; H. Togashi; A. Konno; Y. Yamamoto; Y. Teraoka; A. Yoshigoe; Y. Enta; Y. Narita

doi:10.1149/1.2356291

Real-time observation of initial thermal oxidation on Si(110)-16×2 surface by photoemission spectroscopy

M. Suemitsu, A. Kato, H. Togashi, A. Konno, Y. Yamamoto, Y. Teraoka, A. Yoshigoe, Y. Enta, Y. Narita

Information Devices Division

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Abstract

Kinetics of initial oxidation of Si(110)-16×2 surface has been investigated by using real-time photoemission spectroscopy. One of the most striking features of Si(110) oxidation, in comparison with that of Si(001) surface, is the occurrence of an extremely rapid oxidation in its early stage. Only 15 s after introduction of ∼10^-5 Pa oxygen molecules at 540°C, ∼30% of the Si(110) surface is covered with oxide. This rapid initial oxidation can be related to oxidation at or around the adatom clusters which are reportedly the major constituent of the 16×2 reconstruction on this Si(110) surface. copyright The Electrochemical Society.

Original language	English
Pages (from-to)	311-316
Number of pages	6
Journal	ECS Transactions
Volume	3
Issue number	2
DOIs	https://doi.org/10.1149/1.2356291
Publication status	Published - 2006
Event	Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 2006 Oct 29 → 2006 Nov 3

ASJC Scopus subject areas

Engineering(all)

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title = "Real-time observation of initial thermal oxidation on Si(110)-16×2 surface by photoemission spectroscopy",

abstract = "Kinetics of initial oxidation of Si(110)-16×2 surface has been investigated by using real-time photoemission spectroscopy. One of the most striking features of Si(110) oxidation, in comparison with that of Si(001) surface, is the occurrence of an extremely rapid oxidation in its early stage. Only 15 s after introduction of ∼10-5 Pa oxygen molecules at 540°C, ∼30% of the Si(110) surface is covered with oxide. This rapid initial oxidation can be related to oxidation at or around the adatom clusters which are reportedly the major constituent of the 16×2 reconstruction on this Si(110) surface. copyright The Electrochemical Society.",

author = "M. Suemitsu and A. Kato and H. Togashi and A. Konno and Y. Yamamoto and Y. Teraoka and A. Yoshigoe and Y. Enta and Y. Narita",

note = "Copyright: Copyright 2009 Elsevier B.V., All rights reserved.; Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

year = "2006",

doi = "10.1149/1.2356291",

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AU - Suemitsu, M.

AU - Kato, A.

AU - Togashi, H.

AU - Konno, A.

AU - Yamamoto, Y.

AU - Teraoka, Y.

AU - Yoshigoe, A.

AU - Enta, Y.

AU - Narita, Y.

PY - 2006

Y1 - 2006

N2 - Kinetics of initial oxidation of Si(110)-16×2 surface has been investigated by using real-time photoemission spectroscopy. One of the most striking features of Si(110) oxidation, in comparison with that of Si(001) surface, is the occurrence of an extremely rapid oxidation in its early stage. Only 15 s after introduction of ∼10-5 Pa oxygen molecules at 540°C, ∼30% of the Si(110) surface is covered with oxide. This rapid initial oxidation can be related to oxidation at or around the adatom clusters which are reportedly the major constituent of the 16×2 reconstruction on this Si(110) surface. copyright The Electrochemical Society.

AB - Kinetics of initial oxidation of Si(110)-16×2 surface has been investigated by using real-time photoemission spectroscopy. One of the most striking features of Si(110) oxidation, in comparison with that of Si(001) surface, is the occurrence of an extremely rapid oxidation in its early stage. Only 15 s after introduction of ∼10-5 Pa oxygen molecules at 540°C, ∼30% of the Si(110) surface is covered with oxide. This rapid initial oxidation can be related to oxidation at or around the adatom clusters which are reportedly the major constituent of the 16×2 reconstruction on this Si(110) surface. copyright The Electrochemical Society.

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T2 - Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting

Y2 - 29 October 2006 through 3 November 2006

ER -

Real-time observation of initial thermal oxidation on Si(110)-16×2 surface by photoemission spectroscopy

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