Kinetics of initial oxidation of Si(110)-16×2 surface has been investigated by using real-time photoemission spectroscopy. One of the most striking features of Si(110) oxidation, in comparison with that of Si(001) surface, is the occurrence of an extremely rapid oxidation in its early stage. Only 15 s after introduction of ∼10-5 Pa oxygen molecules at 540°C, ∼30% of the Si(110) surface is covered with oxide. This rapid initial oxidation can be related to oxidation at or around the adatom clusters which are reportedly the major constituent of the 16×2 reconstruction on this Si(110) surface. copyright The Electrochemical Society.
|Number of pages||6|
|Publication status||Published - 2006|
|Event||Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting - Cancun, Mexico|
Duration: 2006 Oct 29 → 2006 Nov 3
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