Real-time observation of initial thermal oxidation on Si(110)-16 × 2 surfaces by O 1s photoemission spectroscopy using synchrotron radiation

Maki Suemitsu, Atsushi Kato, Hideaki Togashi, Atsushi Konno, Yoshihisa Yamamoto, Yuden Teraoka, Akitaka Yoshigoe, Yuzuru Narita, Yoshiharu Enta

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

The initial oxidation on a Si(110)-16 × 2 surface at room temperature and 540°C has been investigated by real-time X-ray photoemission spectroscopy (O 1s) using 687eV photons. At both temperatures, the initial oxidation of Si(110) is characterized by its unique rapid oxidation regime immediately after the introduction of oxygen molecules. O 1s spectra are shown to consist of at least four oxidation states. It is likely that oxidation at or around the adatoms of pentagon pairs, reportedly present on the Si(110)-16 × 2 reconstructed surface, is the predominant process in the very early stage of oxidation.

Original languageEnglish
Pages (from-to)1888-1890
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number4 B
DOIs
Publication statusPublished - 2007 Apr 24

Keywords

  • Dry oxidation
  • Photoemission spectroscopy
  • Si surface
  • Si(110)
  • Synchrotron radiation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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