Real-time observation of high temperature interface between SiC substrate and solution during dissolution of SiC

Sakiko Kawanishi, Takeshi Yoshikawa, Kazuki Morita

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Precise morphological control of the interface between SiC and solution during the solution growth of SiC is crucial for obtaining high quality crystals with fewer defects and less step bunching. In this paper, a new technique for real-time observation of the high temperature interface between SiC and solution through the back surface of SiC was developed by focusing on the "wide" bandgap of SiC. Real-time observation of the interface during dissolution of SiC into an Fe-Si solvent alloy was carried out using a digital microscope, and the submicron-height structure of the solid-liquid interface was clearly observed at up to 1773 K. Interface morphologies, such as numerous hexagonal pits which were present at the initial stage of dissolution, followed by preferential dissolution in the lateral direction, were observed.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2012, ECSCRM 2012
EditorsAlexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov, Mikhail E. Levinshtein
PublisherTrans Tech Publications Ltd
Pages35-38
Number of pages4
ISBN (Print)9783037856246
DOIs
Publication statusPublished - 2013
Event9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012 - St. Petersburg, Russian Federation
Duration: 2012 Sep 22012 Sep 6

Publication series

NameMaterials Science Forum
Volume740-742
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012
CountryRussian Federation
CitySt. Petersburg
Period12/9/212/9/6

Keywords

  • 4H-SiC
  • Fe-Si solvent
  • High temperature interface
  • Melt-back
  • Real-time observation
  • Solution growth

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Kawanishi, S., Yoshikawa, T., & Morita, K. (2013). Real-time observation of high temperature interface between SiC substrate and solution during dissolution of SiC. In A. A. Lebedev, S. Y. Davydov, P. A. Ivanov, & M. E. Levinshtein (Eds.), Silicon Carbide and Related Materials 2012, ECSCRM 2012 (pp. 35-38). (Materials Science Forum; Vol. 740-742). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.740-742.35