TY - GEN
T1 - Real-time observation of high temperature interface between SiC substrate and solution during dissolution of SiC
AU - Kawanishi, Sakiko
AU - Yoshikawa, Takeshi
AU - Morita, Kazuki
PY - 2013
Y1 - 2013
N2 - Precise morphological control of the interface between SiC and solution during the solution growth of SiC is crucial for obtaining high quality crystals with fewer defects and less step bunching. In this paper, a new technique for real-time observation of the high temperature interface between SiC and solution through the back surface of SiC was developed by focusing on the "wide" bandgap of SiC. Real-time observation of the interface during dissolution of SiC into an Fe-Si solvent alloy was carried out using a digital microscope, and the submicron-height structure of the solid-liquid interface was clearly observed at up to 1773 K. Interface morphologies, such as numerous hexagonal pits which were present at the initial stage of dissolution, followed by preferential dissolution in the lateral direction, were observed.
AB - Precise morphological control of the interface between SiC and solution during the solution growth of SiC is crucial for obtaining high quality crystals with fewer defects and less step bunching. In this paper, a new technique for real-time observation of the high temperature interface between SiC and solution through the back surface of SiC was developed by focusing on the "wide" bandgap of SiC. Real-time observation of the interface during dissolution of SiC into an Fe-Si solvent alloy was carried out using a digital microscope, and the submicron-height structure of the solid-liquid interface was clearly observed at up to 1773 K. Interface morphologies, such as numerous hexagonal pits which were present at the initial stage of dissolution, followed by preferential dissolution in the lateral direction, were observed.
KW - 4H-SiC
KW - Fe-Si solvent
KW - High temperature interface
KW - Melt-back
KW - Real-time observation
KW - Solution growth
UR - http://www.scopus.com/inward/record.url?scp=84874041980&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84874041980&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.740-742.35
DO - 10.4028/www.scientific.net/MSF.740-742.35
M3 - Conference contribution
AN - SCOPUS:84874041980
SN - 9783037856246
T3 - Materials Science Forum
SP - 35
EP - 38
BT - Silicon Carbide and Related Materials 2012, ECSCRM 2012
A2 - Lebedev, Alexander A.
A2 - Davydov, Sergey Yu.
A2 - Ivanov, Pavel A.
A2 - Levinshtein, Mikhail E.
PB - Trans Tech Publications Ltd
T2 - 9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012
Y2 - 2 September 2012 through 6 September 2012
ER -