Real-time monitoring of the Si carbonization process by a combined method of reflection high-energy electron diffraction and Auger electron spectroscopy

Ryoji Kosugi, Yuji Takakuwa, Ki Seon Kim, Tadashi Abukawa, Shozo Kono

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The carbonization process of a preferential-domain Si(001)2×1 surface with ethylene was investigated by a combined method of reflection high-energy electron diffraction and Auger electron spectroscopy. It is found that the carbonization process during the so-called incubation time is the Si1-xCx alloy formation before the nucleation of 3C-SiC grains. A reaction model for the Si1-xCx alloy formation and for the 3C-SiC grain growth is proposed for substrate temperatures of 600-750°C. From the model, we postulate that the external supply of Si and C should be started just at the completion of the lateral 3C-SiC grain growth at temperatures of 600-650°C in order to obtain thick 3C-SiC layers with a flat surface morphology.

Original languageEnglish
Pages (from-to)3939-3941
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number26
DOIs
Publication statusPublished - 1999 Jun 28

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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