Real-time monitoring of charge accumulation during pulse-time-modulated plasma

Hiroto Ohtake, Butsurin Jinnai, Yuya Suzuki, Shinnosuke Soda, Tadashi Shimmura, Seiji Samukawa

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


The authors investigated real-time monitoring of charge accumulation during pulse-time-modulated plasma processes by using their developed on-wafer monitoring chip. The charge accumulation potential between the top surface and the bottom in a Si O2 contact structure was measured during pulse-time-modulated plasma exposure with an on-wafer monitoring device. In conventional plasma with rf bias, the electron shading effect could be clearly observed as the potential difference between the wafer surface and the contact-hole bottom. Conversely, the accumulated charge in the pulse-time-modulated operation was drastically decreased. Time-resolved electron and ion flows to the Si O2 contact hole were clarified by the on-wafer monitoring. Accordingly, it was confirmed that the on-wafer monitoring is a very effective tool for investigating the local charge accumulation in actual device structures.

Original languageEnglish
Article number035606JVA
Pages (from-to)2172-2175
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number6
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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