TY - JOUR
T1 - Real-time measurements of Si core level during dry oxidation of Si(100)
AU - Enta, Y.
AU - Miyanishi, Y.
AU - Irimachi, H.
AU - and, M. Niwano
AU - Suemitsu, M.
AU - Miyamoto, N.
PY - 1998/1/1
Y1 - 1998/1/1
N2 - The chemically shifted Si (Formula presented) core level (Formula presented) has been measured in real time during initial thermal oxidation of Si(100) by (Formula presented) gas. The time evolutions of the (Formula presented) intensities showed identical behaviors to those of O (Formula presented) intensities reported previously [Y. Enta et al., Appl. Surf. Sci. 100/101, 449 (1996)], demonstrating that there exist two growth modes for the oxidation: the first-order Langmuir-type adsorption mode and two-dimensional island growth mode at oxidation temperatures below and above (Formula presented), respectively.
AB - The chemically shifted Si (Formula presented) core level (Formula presented) has been measured in real time during initial thermal oxidation of Si(100) by (Formula presented) gas. The time evolutions of the (Formula presented) intensities showed identical behaviors to those of O (Formula presented) intensities reported previously [Y. Enta et al., Appl. Surf. Sci. 100/101, 449 (1996)], demonstrating that there exist two growth modes for the oxidation: the first-order Langmuir-type adsorption mode and two-dimensional island growth mode at oxidation temperatures below and above (Formula presented), respectively.
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U2 - 10.1103/PhysRevB.57.6294
DO - 10.1103/PhysRevB.57.6294
M3 - Article
AN - SCOPUS:0000013803
VL - 57
SP - 6294
EP - 6296
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 0163-1829
IS - 11
ER -