Real-time measurements of Si core level during dry oxidation of Si(100)

Y. Enta, Y. Miyanishi, H. Irimachi, M. Niwano and, M. Suemitsu, N. Miyamoto

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


The chemically shifted Si (Formula presented) core level (Formula presented) has been measured in real time during initial thermal oxidation of Si(100) by (Formula presented) gas. The time evolutions of the (Formula presented) intensities showed identical behaviors to those of O (Formula presented) intensities reported previously [Y. Enta et al., Appl. Surf. Sci. 100/101, 449 (1996)], demonstrating that there exist two growth modes for the oxidation: the first-order Langmuir-type adsorption mode and two-dimensional island growth mode at oxidation temperatures below and above (Formula presented), respectively.

Original languageEnglish
Pages (from-to)6294-6296
Number of pages3
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number11
Publication statusPublished - 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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