The chemically shifted Si (Formula presented) core level (Formula presented) has been measured in real time during initial thermal oxidation of Si(100) by (Formula presented) gas. The time evolutions of the (Formula presented) intensities showed identical behaviors to those of O (Formula presented) intensities reported previously [Y. Enta et al., Appl. Surf. Sci. 100/101, 449 (1996)], demonstrating that there exist two growth modes for the oxidation: the first-order Langmuir-type adsorption mode and two-dimensional island growth mode at oxidation temperatures below and above (Formula presented), respectively.
|Number of pages||3|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 1998 Jan 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics