A Si 2p core-level spectroscopic study has been performed in real time for initial thermal oxide on Si(100) by O2 gas. Time evolutions of the intensities of chemically shifted Si 2p peaks during oxidation have been compared with those of O 2p state, as well as with a simulation from a set of rate equations assuming a simple oxidation model. From the best fits to the data, rate constants relevant to the oxidation of the first and the second silicon layers were successfully derived as a function of the oxidation temperature. In particular, the oxidation of the first layer for temperatures of 540-620 °C was found to occur through direct oxidation of silicon atoms to stoichiometric Silicon dioxide, without formation of any suboxides.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 1998 Dec 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films