Real-time analysis of adsorption processes of Zn on the GaAs(001)-(2×4) surface

Akihiro Ohtake, Tetsuji Yasuda, Takashi Hanada, Takafumi Yao

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

We have studied adsorption processes of Zn on the GaAs(001)-(2×4) surface using reflection high-energy electron diffraction (RHEED) and total-reflection-angle x-ray spectroscopy in real time. A rocking-curve analysis of RHEED has been used to determine the atomic coordinates of both clean and Zn-adsorbed 2×4 surfaces. The analysis for the clean 2×4 surface (ß2 phase) has shown that both As dimers in the outermost and third atomic layers are displaced upward from their bulk positions. When the 2×4 surface was exposed to a Zn beam, the Zn atoms are preferably adsorbed at Ga-vacancy sites in the missing dimer trenches of the 2×4 unit cell with site occupancies of 100% and 50% at 200 and 250 °C, respectively.

Original languageEnglish
Pages (from-to)8713-8718
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume60
Issue number12
DOIs
Publication statusPublished - 1999 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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