Real-space-transfer mechanism of negative differential conductivity in gated graphene-phosphorene hybrid structures: Phenomenological heating model

V. Ryzhii, M. Ryzhii, D. Svintsov, V. Leiman, P. P. Maltsev, D. S. Ponomarev, V. Mitin, M. S. Shur, T. Otsuji

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

We analyze the nonlinear carrier transport in the gated graphene-phosphorene (G-P) hybrid structures - the G-P field-effect transistors using a phenomenological model. This model assumes that due to high carrier densities in the G-P-channel, the carrier system, including the electrons and holes in both the G- and P-layers, is characterized by a single effective temperature. We demonstrate that a strong electric-field dependence of the G-P-channel conductivity and substantially non-linear current-voltage characteristics, exhibiting a negative differential conductivity, are associated with the carrier heating and the real-space carrier transfer between the G- and P-layers. The predicted features of the G-P-systems can be used in the detectors and sources of electromagnetic radiation and in the logical circuits.

Original languageEnglish
Article number114501
JournalJournal of Applied Physics
Volume124
Issue number11
DOIs
Publication statusPublished - 2018 Sep 21

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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