Real information storage using ferroelectrics with a density of 1 TBIT/INCH2

K. Tanaka, Yoshiomi Hiranaga, Yasuo Cho

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Real information data bits were written onto a ferroelectric medium in the form of the polarization direction of nano-domains. Local domain switching was carried out by applying a voltage pulse. Pulse voltage value was varied based on the polarization directions in the immediate environment to keep the bit size constant. As a result, writing and storing of real information data was demonstrated at a density of 1 Tbit/inch2 and a bit error rate as low as 1.8 10-2.

Original languageEnglish
Pages (from-to)99-105
Number of pages7
JournalFerroelectrics
Volume340
Issue number1 PART 1
DOIs
Publication statusPublished - 2006 Dec 1
EventInternational Symposium on Micro- and Nano-Scale Domain Structuring in Ferroelectrics, ISDS'05 - Ekaterinburg, Russian Federation
Duration: 2005 Nov 152005 Nov 19

Keywords

  • Bit error rate
  • Ferroelectric data storage
  • LiTaO
  • Real information
  • Scanning nonlinear dielectric microscope

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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