Real information recording in ferroelectric data storage medium with memory density of 1 Tbit/inch2

K. Tanaka, Y. Hiranaga, Y. Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, a new method to achieve real information recording with a density of 1 Tbit/inch2 in ferroelectric data storage systems is proposed. In this system, data bits were written in the form of the polarization direction of nano domains, Local domain switching was carried out by applying a voltage pulse. A series of test writes revealed that the bit size varied according to the polarization direction of the bits in the immediate environment. Therefore, in order to keep the bit size constant (at 25.6 nm), the pulse amplitude required to create each individual bit was calculated as a function of the polarities of the surrounding data bits. As a result, real information storage at a density of 1 Tbit/inch2 was successfully achieved, with a low bit error rate of 1.8 × 10-2.

Original languageEnglish
Title of host publicationFerroelectric Thin Films XIII
PublisherMaterials Research Society
Pages239-244
Number of pages6
ISBN (Print)155899856X, 9781558998568
DOIs
Publication statusPublished - 2005
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: 2005 Nov 282005 Dec 2

Publication series

NameMaterials Research Society Symposium Proceedings
Volume902
ISSN (Print)0272-9172

Other

Other2005 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA
Period05/11/2805/12/2

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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