Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices

Takao Marukame, Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Yoshiaki Saito

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

For future high-performance reconfigurable logic devices, we developed a novel spin-based MOSFET; "Spin-Transfer-Torque-Switching MOSFET (STS-MOSFET)" that enables the read/write performance and memorization of the configuration with nonvolatility by using the ferromagnetic electrodes and the spin-polarized current through Si channel and spin-transfer torque switching in magnetic tunnel junctions (MTJs) on the source/drain. The read/write operation of the STS-MOSFET was first demonstrated in this work. The highly spin-polarized ferromagnet/MgO tunnel barrier electrodes and the MTJs using their structure for the source/drain showed great possibility to realize our proposed STS-MOSFET and to enhance their performance.

Original languageEnglish
Title of host publication2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
Pages9.2.1-9.2.4
DOIs
Publication statusPublished - 2009 Dec 1
Externally publishedYes
Event2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
Duration: 2009 Dec 72009 Dec 9

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2009 International Electron Devices Meeting, IEDM 2009
Country/TerritoryUnited States
CityBaltimore, MD
Period09/12/709/12/9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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