TY - JOUR
T1 - Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor
AU - van der Heijden, Joost
AU - Kobayashi, Takashi
AU - House, Matthew G.
AU - Salfi, Joe
AU - Barraud, Sylvain
AU - Laviéville, Romain
AU - Simmons, Michelle Y.
AU - Rogge, Sven
PY - 2018/12/7
Y1 - 2018/12/7
N2 - Coupling spin qubits to electric fields is attractive to simplify qubit manipulation and couple qubits over long distances. Electron spins in silicon offer long lifetimes, but their weak spin-orbit interaction makes electrical coupling challenging. Hole spins bound to acceptor dopants, spin-orbit–coupled J = 3/2 systems similar to Si vacancies in SiC and single Co dopants, are an electrically active spin system in silicon. However, J = 3/2 systems are much less studied than S = 1/2 electrons, and spin readout has not yet been demonstrated for acceptors in silicon. Here, we study acceptor hole spin dynamics by dispersive readout of single-hole tunneling between two coupled acceptors in a nanowire transistor. We identify mJ = ±1/2 and mJ = ±3/2 levels, and we use a magnetic field to overcome the initial heavy-light hole splitting and to tune the J = 3/2 energy spectrum. We find regimes of spin-like (+3/2 to −3/2) and charge-like (±1/2 to ±3/2) relaxations, separated by a regime of enhanced relaxation induced by mixing of light and heavy holes. The demonstrated control over the energy level ordering and hybridization are new tools in the J = 3/2 system that are crucial to optimize single-atom spin lifetime and electrical coupling.
AB - Coupling spin qubits to electric fields is attractive to simplify qubit manipulation and couple qubits over long distances. Electron spins in silicon offer long lifetimes, but their weak spin-orbit interaction makes electrical coupling challenging. Hole spins bound to acceptor dopants, spin-orbit–coupled J = 3/2 systems similar to Si vacancies in SiC and single Co dopants, are an electrically active spin system in silicon. However, J = 3/2 systems are much less studied than S = 1/2 electrons, and spin readout has not yet been demonstrated for acceptors in silicon. Here, we study acceptor hole spin dynamics by dispersive readout of single-hole tunneling between two coupled acceptors in a nanowire transistor. We identify mJ = ±1/2 and mJ = ±3/2 levels, and we use a magnetic field to overcome the initial heavy-light hole splitting and to tune the J = 3/2 energy spectrum. We find regimes of spin-like (+3/2 to −3/2) and charge-like (±1/2 to ±3/2) relaxations, separated by a regime of enhanced relaxation induced by mixing of light and heavy holes. The demonstrated control over the energy level ordering and hybridization are new tools in the J = 3/2 system that are crucial to optimize single-atom spin lifetime and electrical coupling.
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U2 - 10.1126/sciadv.aat9199
DO - 10.1126/sciadv.aat9199
M3 - Article
C2 - 30539142
AN - SCOPUS:85058599041
VL - 4
JO - Science advances
JF - Science advances
SN - 2375-2548
IS - 12
M1 - eaat9199
ER -