Reactive wetting dynamics on 6H-SiC surface with oxide layer

Shun Ichiro Tanaka, Chihiro Iwamoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)


Nanoscale singularity at the reactive wetting front on the 6H-SiC (0006) surface with amorphous oxide layer was studied using video recorded in situ to clarify the dynamic atomistic behaviors of the brazing and the molten tip spreading on a high-temperature stage of a high-resolution transmission electron microscope. A 0.5-nm-thick precursor film spreading ahead of the main molten alloy on SiC (0006) at 1073 K and continuous spreading of the molten alloy were clearly observed on the SiC (0006) surface with a less than 1-nm-thick amorphous layer. Molten Ti and TiC nanolayers preceded the Ti5Si3 nanolayer at the tip and they traveled continuously at a velocity of 14 nm/sec on the plane perpendicular to SiC (0006). Since Ti atoms in the molten alloy diffuse sufficiently rapidly on the SiC surface to the tip, the formation of these layers may be the rate-determining step of spreading. Discontinuous spreading of the precursor tip on SiC (0006) with a thick amorphous film was observed in contrast to the continuous spreading on SiC with a thin film. This suggests that the spreading of the Ti molten alloy on SiC is also controlled by the dissolution of the amorphous layer.

Original languageEnglish
Title of host publicationAICAM 2005 - Proceedings of the Asian International Conference on Advanced Materials
PublisherTrans Tech Publications
Number of pages4
ISBN (Print)0878499792, 9780878499793
Publication statusPublished - 2006
EventAICAM 2005 - Asian International Conference on Advanced Materials - Beijing, China
Duration: 2005 Nov 32005 Nov 5

Publication series

NameAdvanced Materials Research
ISSN (Print)1022-6680


OtherAICAM 2005 - Asian International Conference on Advanced Materials


  • Atomistic dynamic wetting
  • In situ observation
  • Oxide film
  • Precursor tip
  • Reactive wetting

ASJC Scopus subject areas

  • Engineering(all)


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