Reactive solid-phase epitaxy - A novel growth method for single-crystalline thin films of complex oxides with superlattice structure

H. Ohta, K. Nomura, H. Hiramatsu, T. Suzuki, K. Ueda, M. Orita, M. Hirano, Yuichi Ikuhara, H. Hosono

    Research output: Contribution to journalConference article

    1 Citation (Scopus)

    Abstract

    We have developed a novel growth method for single-crystalline film of natural superlattice oxides and named the method "Reactive Solid-Phase Epitaxy (R-SPE)." Single-crystalline thin films of homologous series InGaO3(ZnO)m (m=integer) are fabricated by the R-SPE method and its growth mechanism, especially a role of ZnO epitaxial layer, is clarified. High-temperature annealing of bi-layer films consisting of an amorphous InGaO3(ZnO)5: layer deposited at room temperature and an epitaxial ZhO layer on YSZ substrate allows for the growth of single-crystalline film with a controlled chemical composition. The ZnO layer plays an essential role in determining the crystallographic orientation, while the thickness ratio between the two layers controls the film composition.

    Original languageEnglish
    Pages (from-to)257-265
    Number of pages9
    JournalMaterials Research Society Symposium - Proceedings
    Volume747
    Publication statusPublished - 2003 Aug 26
    EventCrystalline Oxide-Silicon Heterostructures and Oxide Optoelectronics - Boston, MA, United States
    Duration: 2002 Dec 22002 Dec 4

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

    Fingerprint Dive into the research topics of 'Reactive solid-phase epitaxy - A novel growth method for single-crystalline thin films of complex oxides with superlattice structure'. Together they form a unique fingerprint.

    Cite this