Reactive force-field molecular dynamics study of the silicon-germanium deposition processes by plasma enhanced chemical vapor deposition

Naoya Uene, Takuya Mabuchi, Masaru Zaitsu, Shigeo Yasuhara, Takashi Tokumasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In order to form a SiGe thin film by chemical vapor deposition (CVD) with a suitable quality for advanced devices, the relationships between materials/process and structure/composition are needed to be clarified at the atomic level. We simulated SiGe CVD by using reactive force-field (ReaxFF) molecular dynamics simulations, especially on binary systems of SiHx + GeHx, and derived the influence of the substrate temperature and these ratios of gaseous species on the crystallinity and compositions in the thin films. The crystallinity increases as the substrate temperature increases, and the lowest crystallinity is obtained at the ratios of gaseous species 0.5 and 0.7 for the SiH3 and SiH2, respectively. As the substrate temperature increases, the hydrogen content decreases while Si and Ge content tend to increase. These trends can be seen in relevant studies. Through this simulation we successfully observe that the reactivity of gaseous species greatly affects the crystallinity and compositions in the thin films.

Original languageEnglish
Title of host publication2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages105-108
Number of pages4
ISBN (Electronic)9784863487635
DOIs
Publication statusPublished - 2020 Sep 23
Event2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 - Virtual, Kobe, Japan
Duration: 2020 Sep 32020 Oct 6

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2020-September

Conference

Conference2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
CountryJapan
CityVirtual, Kobe
Period20/9/320/10/6

Keywords

  • Chemical Vapor Deposition
  • Reactive Force- Field Molecular Dynamics Simulation
  • Silicon-Germanium
  • Thin Film Deposition

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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