Reactive Force-Field Molecular Dynamics Study of the Effect of Gaseous Species on SiliconGermanium Alloy Growth by PECVD Techniques

Naoya Uene, Takuya Mabuchi, Masaru Zaitsu, Shigeo Yasuhara, Takashi Tokumasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We simulated the growth of SiGe alloys by using reactive force-field (ReaxFF) molecular dynamics simulations in binary systems of SiHx and GeHx and identify the effect of gaseous species on the compositions and crystallinity in alloys. The compositions in alloys could be estimated if compositions of gaseous species can be identified because of the observation of the linear increase in Ge content in alloys. Supplying GeH2 decreased the crystallinity compared to GeH3. The mechanism is described by the mobility and reactivity of the gaseous species and surface structures. These results suggest that the mobility and reactivity of both surface and gaseous species are essential in identifying the effect of gaseous species on composition and crystallinity.

Original languageEnglish
Title of host publicationSISPAD 2021 - 2021 International Conference on Simulation of Semiconductor Processes and Devices, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages238-241
Number of pages4
ISBN (Electronic)9781665406857
DOIs
Publication statusPublished - 2021 Sep 27
Event26th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2021 - Dallas, United States
Duration: 2021 Sep 272021 Sep 29

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2021-September

Conference

Conference26th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2021
Country/TerritoryUnited States
CityDallas
Period21/9/2721/9/29

Keywords

  • Chemical Vapor Deposition
  • Reactive Force-Field Molecular Dynamics Simulation
  • Silicon-Germanium
  • Thin Film Growth

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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