Reactive force-field molecular dynamics study of sige thin film growth in plasma enhanced chemical vapor deposition processes

N. Uene, T. Mabuchi, M. Zaitsu, S. Yasuhara, T. Tokumasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The SiGe thin films, such as hydrogenated amorphous SiGe (a-SiGe:H) and hydrogenated microcrystalline SiGe (μc-SiGe:H), are known as a potential material. In order to form promising SiGe thin films using chemical vapor deposition, relationship between materials/process and structure/composition should be clarified at the atomic level. We analyzed the influence of the substrate temperature and the ratio of SiH3 and GeH3, which are considered to be the dominant gaseous species on the deposition, on the crystallinity and atomic content in SiGe thin films by reactive force-field molecular dynamics simulations. The crystallinity increased as the substrate temperature increased, and the lowest crystallinity was obtained when the ratio of SiH3 and GeH3 is approximately 0.5. The hydrogen content decreased as the substrate temperature increased, while silicon and germanium content tended to increase as substrate temperature increased. These results were in good agreement with relevant studies.

Original languageEnglish
Title of host publicationPRiME 2020
Subtitle of host publicationSiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9
EditorsQ. Liu, J. M. Hartmann, J. R. Holt, X. Gong, V. Jain, G. Niu, G. Masini, A. Ogura, S. Miyazaki, M. Ostling, W. Bi, A. Schulze, A. Mai
PublisherIOP Publishing Ltd.
Pages177-184
Number of pages8
Edition5
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2020
EventPacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 - Honolulu, United States
Duration: 2020 Oct 42020 Oct 9

Publication series

NameECS Transactions
Number5
Volume98
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferencePacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200
CountryUnited States
CityHonolulu
Period20/10/420/10/9

ASJC Scopus subject areas

  • Engineering(all)

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