Reactive fast atom beam etching of a wide-gap semiconductor GaN

Hidenao Tanaka, Fusao Shimokawa, Toru Sasaki, Takashi Matsuoka

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Reactive fast atom beam etching of a wide-gap semiconductor GaN is described. The etching depth of GaN films on (011̄2)-oriented sapphire is proportional to the etching time. The etching rate using Cl2 is 0.10-0.12 μm/min. in the substrate temperature range of 80-150°C. This is smaller than the rate for GaAs (100), and over ten times higher than for sapphire substrate.

Original languageEnglish
Pages (from-to)150-153
Number of pages4
JournalOptoelectronics Tokyo
Volume6
Issue number1
Publication statusPublished - 1991 Jun 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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