Reactive etching of platinum-manganese using a pulse-time-modulated chlorine plasma and a H2 plasma post-etch corrosion treatment

Shinya Kumagai, Toshiaki Shiraiwa, Seiji Samukawa

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The highly anisotropic and corrosion-less etching of a PtMn thin film using a pulse-time-modulated (TM) chlorine electron-cyclotron-resonance plasma was discussed. The PtMn etching rate was found to considerably increase using TM plasma, when compared with conventional continuous-wave plasma. It was also observed that the formation of etching residues and post-etch corrosion products was reduced by increasing the pulse-off time of the TM plasma. It was thus concluded that the combination of TM chlorine plasma etching and the hydrogen-plasma post-exposure treatment can successfully pattern highly anisotropic vertical etched profiles with sub-micron width and no critical-dimension loss.

Original languageEnglish
Pages (from-to)1093-1100
Number of pages8
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume22
Issue number4
DOIs
Publication statusPublished - 2004 Jul 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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