The highly anisotropic and corrosion-less etching of a PtMn thin film using a pulse-time-modulated (TM) chlorine electron-cyclotron-resonance plasma was discussed. The PtMn etching rate was found to considerably increase using TM plasma, when compared with conventional continuous-wave plasma. It was also observed that the formation of etching residues and post-etch corrosion products was reduced by increasing the pulse-off time of the TM plasma. It was thus concluded that the combination of TM chlorine plasma etching and the hydrogen-plasma post-exposure treatment can successfully pattern highly anisotropic vertical etched profiles with sub-micron width and no critical-dimension loss.
|Number of pages||8|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 2004 Jul 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films