TY - JOUR
T1 - Reaction path for formation of Cu2SnSe3 film by selenization of Cu-Sn precursor
AU - Tang, Zeguo
AU - Aoyagi, Kenta
AU - Nukui, Yuki
AU - Kosaka, Kiichi
AU - Uegaki, Hikaru
AU - Chatana, Jakapan
AU - Hironiwa, Daisuke
AU - Minemoto, Takashi
N1 - Funding Information:
This work was partly supported by the Kakenhi (No. 14454434 ) supplied by Japan Society for the Promotion of Science (JSPS).
Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.
PY - 2015/7/31
Y1 - 2015/7/31
N2 - Reaction path for fabrication of Cu2SnSe3 (CTSe) film by selenization of Cu-Sn precursor was investigated via in-situ X-ray diffraction (XRD) as well as glazing incident XRD (GIXRD) measurements. Cross-sectional scanning electron microscopy (SEM)-energy dispersive spectrometry (EDS) and transmission electron microscope (TEM) analyses revealed the element and phase distribution along the depth direction. Based on these results, a proposed growth model was concluded below: first, the Se atoms from evaporation source reacted with Cu and Sn atoms to produce Cu2-xSe and SnSe2 phases. Noticeably, resulting film presented bilayer feature with Cu2-xSe located at the surface and SnSe2 located at bottom. Second, CTSe phase formed at the interface of Cu2-xSe and SnSe2 as the increasing temperature. The Cu2-xSe was depleted by Sn-related secondary phases when the Cu/Sn ratio was smaller than 1.72. The secondary phases of SnSe2 and SnSe were coexisted with CTSe phase independent of Cu/Sn ratio in metallic precursor, which was attributed to the weak diffusion ability of Sn and Sn-related secondary phases in the CTSe film. The origins for high carrier concentration in CTSe films were ascribed to the Cu2-xSe and intrinsic acceptor concentration and effective approach to reduce the value was explored. An attempt of solar cell with CTSe as absorber was performed and photocurrent of 9.9 mA/cm2 was detected.
AB - Reaction path for fabrication of Cu2SnSe3 (CTSe) film by selenization of Cu-Sn precursor was investigated via in-situ X-ray diffraction (XRD) as well as glazing incident XRD (GIXRD) measurements. Cross-sectional scanning electron microscopy (SEM)-energy dispersive spectrometry (EDS) and transmission electron microscope (TEM) analyses revealed the element and phase distribution along the depth direction. Based on these results, a proposed growth model was concluded below: first, the Se atoms from evaporation source reacted with Cu and Sn atoms to produce Cu2-xSe and SnSe2 phases. Noticeably, resulting film presented bilayer feature with Cu2-xSe located at the surface and SnSe2 located at bottom. Second, CTSe phase formed at the interface of Cu2-xSe and SnSe2 as the increasing temperature. The Cu2-xSe was depleted by Sn-related secondary phases when the Cu/Sn ratio was smaller than 1.72. The secondary phases of SnSe2 and SnSe were coexisted with CTSe phase independent of Cu/Sn ratio in metallic precursor, which was attributed to the weak diffusion ability of Sn and Sn-related secondary phases in the CTSe film. The origins for high carrier concentration in CTSe films were ascribed to the Cu2-xSe and intrinsic acceptor concentration and effective approach to reduce the value was explored. An attempt of solar cell with CTSe as absorber was performed and photocurrent of 9.9 mA/cm2 was detected.
KW - Carrier concentration
KW - CuSnSe
KW - Secondary phases
KW - Thin-film solar cell
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U2 - 10.1016/j.solmat.2015.07.025
DO - 10.1016/j.solmat.2015.07.025
M3 - Article
AN - SCOPUS:84938088581
VL - 143
SP - 311
EP - 318
JO - Solar Cells
JF - Solar Cells
SN - 0927-0248
ER -