Reaction of a Si (100) surface with a hot C2H4 beam

I. Kusunoki; Y. Igari; S. Ishidzuka; T. Mine; T. Takami; T. Takaoka

doi:10.1016/S0039-6028(99)00057-6

Reaction of a Si (100) surface with a hot C₂H₄ beam

I. Kusunoki, Y. Igari, S. Ishidzuka, T. Mine, T. Takami, T. Takaoka

Center for Advanced Microscopy and Spectroscopy

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

A clean Si(100) surface at 670°C in ultrahigh vacuum was irradiated with a C₂H₄ molecular beam produced from a nozzle at 900°C. The reaction products on the surface were investigated using X-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and scanning electron microscopy. The central area of the surface irradiated with the beam was covered with a mixture of graphitic film and SiC grains. At the fringe of the central area, however, the SiC grains were the dominant products, which were epitaxially grown on the Si(100) surface. The density of the SiC grains decreased with the distance from the fringe. Compared with the results using the molecular beam produced from the nozzle at room temperature, it is concluded that the dissociation rate of the hot C₂H₄ molecules is higher than that of the cold molecules, resulting in a carbon film. The growth mechanisms of the graphitic and SiC products are discussed.

Original language	English
Pages (from-to)	167-171
Number of pages	5
Journal	Surface Science
Volume	433-435
DOIs	https://doi.org/10.1016/S0039-6028(99)00057-6
Publication status	Published - 1999 Aug 2
Event	Proceedings of the 1998 14th International Vacuum Congress(ICV-14), 10th Conference on Solid Surfaces(ICSS-10), 5th Conference on Nanometre-scale Science and Technology(NANO-5), 10th International Conference on Quantitative Surface Analysis(QSA-10) - Birmingham, United Kingdom Duration: 1998 Aug 31 → 1998 Sep 4

Keywords

Carbonization
Molecular beam
Molecule-solid reactions
Silicon
Silicon carbide
X-ray photoelectron spectroscopy

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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title = "Reaction of a Si (100) surface with a hot C2H4 beam",

abstract = "A clean Si(100) surface at 670°C in ultrahigh vacuum was irradiated with a C2H4 molecular beam produced from a nozzle at 900°C. The reaction products on the surface were investigated using X-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and scanning electron microscopy. The central area of the surface irradiated with the beam was covered with a mixture of graphitic film and SiC grains. At the fringe of the central area, however, the SiC grains were the dominant products, which were epitaxially grown on the Si(100) surface. The density of the SiC grains decreased with the distance from the fringe. Compared with the results using the molecular beam produced from the nozzle at room temperature, it is concluded that the dissociation rate of the hot C2H4 molecules is higher than that of the cold molecules, resulting in a carbon film. The growth mechanisms of the graphitic and SiC products are discussed.",

keywords = "Carbonization, Molecular beam, Molecule-solid reactions, Silicon, Silicon carbide, X-ray photoelectron spectroscopy",

author = "I. Kusunoki and Y. Igari and S. Ishidzuka and T. Mine and T. Takami and T. Takaoka",

note = "Funding Information: This work was financially supported in part by grants in aid for scientific research from the Ministry of Education, Science and Culture of Japan and by CREST of the Japan Science and Technology Corporation.; Proceedings of the 1998 14th International Vacuum Congress(ICV-14), 10th Conference on Solid Surfaces(ICSS-10), 5th Conference on Nanometre-scale Science and Technology(NANO-5), 10th International Conference on Quantitative Surface Analysis(QSA-10) ; Conference date: 31-08-1998 Through 04-09-1998",

year = "1999",

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doi = "10.1016/S0039-6028(99)00057-6",

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TY - JOUR

T1 - Reaction of a Si (100) surface with a hot C2H4 beam

AU - Kusunoki, I.

AU - Igari, Y.

AU - Ishidzuka, S.

AU - Mine, T.

AU - Takami, T.

AU - Takaoka, T.

N1 - Funding Information: This work was financially supported in part by grants in aid for scientific research from the Ministry of Education, Science and Culture of Japan and by CREST of the Japan Science and Technology Corporation.

PY - 1999/8/2

Y1 - 1999/8/2

N2 - A clean Si(100) surface at 670°C in ultrahigh vacuum was irradiated with a C2H4 molecular beam produced from a nozzle at 900°C. The reaction products on the surface were investigated using X-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and scanning electron microscopy. The central area of the surface irradiated with the beam was covered with a mixture of graphitic film and SiC grains. At the fringe of the central area, however, the SiC grains were the dominant products, which were epitaxially grown on the Si(100) surface. The density of the SiC grains decreased with the distance from the fringe. Compared with the results using the molecular beam produced from the nozzle at room temperature, it is concluded that the dissociation rate of the hot C2H4 molecules is higher than that of the cold molecules, resulting in a carbon film. The growth mechanisms of the graphitic and SiC products are discussed.

AB - A clean Si(100) surface at 670°C in ultrahigh vacuum was irradiated with a C2H4 molecular beam produced from a nozzle at 900°C. The reaction products on the surface were investigated using X-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and scanning electron microscopy. The central area of the surface irradiated with the beam was covered with a mixture of graphitic film and SiC grains. At the fringe of the central area, however, the SiC grains were the dominant products, which were epitaxially grown on the Si(100) surface. The density of the SiC grains decreased with the distance from the fringe. Compared with the results using the molecular beam produced from the nozzle at room temperature, it is concluded that the dissociation rate of the hot C2H4 molecules is higher than that of the cold molecules, resulting in a carbon film. The growth mechanisms of the graphitic and SiC products are discussed.

KW - Carbonization

KW - Molecular beam

KW - Molecule-solid reactions

KW - Silicon

KW - Silicon carbide

KW - X-ray photoelectron spectroscopy

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M3 - Conference article

AN - SCOPUS:0033318118

VL - 433-435

SP - 167

EP - 171

JO - Surface Science

JF - Surface Science

SN - 0039-6028

T2 - Proceedings of the 1998 14th International Vacuum Congress(ICV-14), 10th Conference on Solid Surfaces(ICSS-10), 5th Conference on Nanometre-scale Science and Technology(NANO-5), 10th International Conference on Quantitative Surface Analysis(QSA-10)

Y2 - 31 August 1998 through 4 September 1998

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